Low pressure chemical vapor deposition (LPCVD) of Me-Si-N (Me= Re, W, Ta) thin films were investigated for use as diffusion barrier between Cu overlayer and oxidized silicon substrates. Their "amorphous" or nanocrystalline structure is expected to provide better performance than usual polycrystalline barriers. For the CVD process, gaseous precursors were silane, in situ fabricated metal chlorid...

In situ studies have been performed on thin films in the Al rich region of the Al–Cu–Fe–Cr quasicrystalline phase field. Thin films were grown by magnetron sputtering on atomically flat MgO (0 0 1) and Al O (0 0 0 1) and subsequently studied by 2 3 transmission electron microscopy and X-ray photoelectron spectroscopy. High resolution electron microscopy shows that thin films (-30 nm) grown at r...

Using a combination of high resolution X-ray powder diffraction and X-ray Raman scattering spectroscopy at the B K- and Ca L2,3-edges, we analyzed the reaction products of Ca(BH4)2 after annealing at 350 °C and 400 °C under vacuum conditions. We observed the formation of nanocrystalline/amorphous CaB6 mainly and found only small contributions from amorphous B for annealing times larger than 2 h...

cu-mo and cu-ti contact structures were fabricated on multi-crystalline silicon substrates to provide a low resistance ohmic contact. deposition steps are done in an excellent vacuum chamber by means of electron beam evaporation and samples are then annealed for the realization of an efficient alloy layer. the effects of process parameters such as film thickness, annealing duration and temperat...

We report on the preparation of large-scale uniform bilayer graphenes on nominally flat Si-polar 6H-SiC(0001) substrates by flash annealing in ultrahigh vacuum. The resulting graphenes have a single thickness of one bilayer and consist of regular terraces separated by the triple SiC bilayer steps on the 6H-SiC(0001) substrates. In situ scanning tunneling microscopy reveals that suppression of p...

This study investigated carrier compensation induced by thermal annealing in sputtered ZnO:Al (Al₂O₃: 0.25, 0.5, 1.0, and 2.0 wt %) films. The films were post-annealed in a N₂ atmosphere at low (1 × 10-23 atm) and high (1 × 10-4 atm) oxygen partial pressures (PO2). In ZnO:Al films with low Al contents (i.e., 0.25 wt %), the carrier density (n) began to decrease at annealing temperatures (Ta) of...

Single-phase Zr2Co11 nanomagnetic materials with high coercivity have been fabricated by melt spinning with subsequent annealing under Ar, N2, and vacuum. Annealing coarsens the grains and decreases the density of defects, leading to intergrain decoupling action and the enhancement of the magnetocrystalline anisotropy field of the hard magnetic phase. Therefore, coercivity increases 44.7% from ...

In this paper, the transparent conductive aluminum-doped zinc oxide (ZnO: Al, AZO) thin films with different annealing conditions are studied. The AZO thin films were prepared on the Coring glass substrate by RF magnetron sputtering. The AZO thin films were annealed in atmosphere of vacuum and hydrogen at temperatures from 100 to 400°C in steps of 100°C for 1 min, respectively, to investigate t...

Pt wires were fabricated by using electron-beam (EB) and Ga focused-ion-beam (FIB) irradiation while providing C5H5Pt(CH3)3 gas through a nozzle. Electron transport properties of the wires were investigated. The resistance of the EB-deposited wires was quite high as deposited but was reduced by 3–4 orders of magnitude after 400–500C annealing. The electron transport of the as-deposited EB-depos...

We have investigated the effects of thermal annealing on ex-situ chemically vapor deposited submonolayer graphene islands on polycrystalline Cu foil at the atomic-scale using ultrahigh vacuum scanning tunneling microscopy. Low-temperature annealed graphene islands on Cu foil (at ∼430 °C) exhibit predominantly striped Moiré patterns, indicating a relatively weak interaction between graphene and ...