This paper discusses how a robot can develop its state vector according to the complexity of the interactions with its environment. A method for controlling the complexity is proposed for a vision-based mobile robot of which task is to shoot a ball into a goal avoiding collisions with a goal keeper. First, we provide the most di cult situation (the maximum speed of the goal keeper with chasing-...

This paper discusses how an animat can develop its internal representation according to the complexity of the interactions with its environment through its capabilities of sensing and acting. The complexity should be carefully increased so that the animat can develop its internal representation so as to accomplish a task at hand. A method for controlling the complexity is proposed for a vision-...

Power consumption of Very Large Scale Integrated (VLSI) circuits has been growing at an alarmingly rapid rate. This increase in power consumption, coupled with the increasing demand for portable/hand-held electronics, has made power consumption a dominant concern in the design of VLSI circuits today. Traditionally dynamic (switching) power has dominated the total power consumption of VLSI circu...

The market for U.S. Treasury securities is by many measures the largest, most active debt market in the world. At the end of September 1999, the amount of Treasury debt held outside federal government accounts totaled about $3.6 trillion, close to the amount of outstanding debt securities issued by all U.S. corporations combined.1 Moreover, enormous amounts of Treasury securities are traded eve...

The vast majority of the term structure literature has focused on modeling the riskfree term structure as implied by Treasury bond yields. As fixed-income markets should be interconnected, we combine the modeling of Treasury yields with a modeling of the common factors present in representative risky credit spread term structures derived from Bloomberg corporate bond data. The question we addre...

Scaling of single-gate MOSFET faces great challenges in the nanometer regime due to the severe shortchannel effects that cause an exponential increase in the sub-threshold and gate-oxide leakage currents. Double-gate FinFET technology mitigates these limitations by the excellent control over a thin silicon body by two electrically coupled gates. In this paper a variable threshold voltage keeper...