Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in order to study the resulting mechanical properties of this material. In addition, poly-crystalline 3CSiC was also grown on (100)Si so that a comparison with monocrystaline 3C-SiC, also grown on (100)Si, could be made. The mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si sub...

Soil inorganic carbon (SIC) and organic carbon (SOC) are important carbon reservoirs in terrestrial ecosystems. However, little attention was paid to SIC dynamics in cropland. We conducted a survey in the upper Yellow River Delta of North China Plain. We collected 155 soil samples from 31 profiles, and measured SOC, SIC and soluble Ca2+ and Mg2+ contents. Our results showed that mean SOC conten...

The growth properties of b-SiC on ~100! Si grown by rapid thermal chemical vapor deposition, using a single precursor ~methylsilane! without an initial surface carbonization step, were investigated. An optimun growth temperature at 800 °C was found to grow single crystalline materials. A simple Al Schottky barrier fabricated on n-type SiC grown on Si substrates exhibited a ‘‘hard’’ reverse brea...

The doctrine of informed consent, as opposed to medical paternalism, is intended to facilitate patient autonomy by allowing patient participation in the medical decision-making process. However, regrettably, the surgical informed consent (SIC) process is invariably underestimated and reduced to a documentary procedure to protect physicians from legal liability. Moreover, residents are rarely tr...

In this work, the interactions between tungsten (W) and silicon carbide (SiC) in Sigma SiC fibers at high temperatures were characterized using scanning and transmission electron microscopy. These fibers could have the potential for use in fusion-related applications owing to their high thermal conductivity compared with pure SiC-based fibers. The as-received fibers were composed of a 100-μm-th...

The potential impact of SiC devices on a wind generation system is explored by simulations in this work. The system modeling is explained in detail. Most recent SiC MOSFET prototypes are obtained, tested, and used to form a bi-directional converter in the simulation. The performance of the SiC converter is analyzed and compared to its Si counterpart at different temperatures and frequencies. A ...

This chapter reviews the novel fabrication process of continuous SiCf /SiC composites based on electrophoretic deposition (EPD). EPD process is very effective for achieving relatively homogeneous carbon coating with the thickness of several tens to hundreds nanometers on SiC fibers. Carbon interface with the thickness of at least 100 nm formed by EPD acts effectively for inducing interfacial de...

Whereas SiC switches have the overall lowest dynamic losses, they show higher static losses due to the lack of conductivity modulation and the necessary chip size limitations due to the still high SiC base material price. The frequency dependence of the total losses of the various 1200V configurations (Si-IGBT + Si freewheeling diode, Si IGBT + SiC Schottky diode, SiC-JFET cascode plus internal...

This paper focuses on using high temperature operating capability of SiC power devices, which are packaged in power modules. A SiC Schottky barrier diode is mounted on an active metal brazed Si3N4 substrate as a heat resistive power module. The temperature dependency of electrical characteristics of the SiC device and thermal dynamics of the power module are modeled for numerical electro therma...