We report the development of a chemical sensor based on a Co(II) phthalocyanine acrylate polymer (Co(II)Pc-AP) for perchlorate anion detection. We have used two types of transducers, silicon nitride (Si3N4) and hafnium oxide (HfO2). The adhesion of the Co(II)Pc-AP on different transducers and their surface qualities have been studied by contact angle measurements. We have studied the pH effect ...

Submitted for the MAR13 Meeting of The American Physical Society Investigation of E1 2g and A1g Raman Modes of Few-Layer MoS2 on HfO2 Substrate HUI-CHUN CHIEN, JATINDER KUMAR, HSIN-YING CHIU, University of Kansas — The recent research work by Radisavljevic et al.[1] shows that the mobilities of monolayer MoS2 transistors can be improved by employing a thin layer of hafnium oxide as top-gate die...

In this letter, HfO2 based RRAM with varying device sizes are discussed with an analysis on their electrical characteristics. Device sizes of 60nm and 120nm were achieved by using different thickness of nitride spacer after 200nm contact hole is formed. Platinum (Pt) bottom electrode and Titanium Nitride (TiN) top electrode were used with HfO2 dielectric as the resistance switching layer. Unifo...

This study proposes a novel HfO2 nanocrystal memory on epi-SiGe (Ge: 15%) channel. Because SiGe has a smaller bandgap than that of silicon, it increases electron/hole injection and the enhances program/erase speeds. This study compares the characteristics of HfO2 nanocrystal memories with different oxynitride tunnel oxide thicknesses on Si and epi-SiGe substrate. Results show that the proposed ...

HfO2 and V2O5 as multi-layer thin films are discussed for their potential use transparent heat mirrors. Multi-layered HfO2/V2O5/HfO2 with a thickness of 100/60/100 nm were prepared via e-beam evaporation on soda–lime glass substrate. Rutherford backscattering confirmed the structure uniform surface. The as-deposited annealed at 300 °C 400 °C, respectively, 1 h in air. transmittance approximatel...

This study characterizes the charge storage characteristics of metal/HfO2/Au nanocrystals (NCs)/SiO2/Si and significantly improves memory performance and retention time by annealing the HfO2 blocking layer in O2 ambient at 400°C. Experimental evidence shows that the underlying mechanism can be effectively applied to reduce oxygen vacancy and suppress unwanted electron trap-assisted tunneling. A...

Oxygen-related point defects can provide fixed charge or act as charge trapping centers in high-k gate stacks and, therefore, their origins and properties are of great interest. In this paper, reported experimental and theoretical results related to oxygen defects in HfO2 gate dielectrics are reviewed critically to assess the relative importance of different defect species in terms of their ele...

TheZrO2-based materials are practically important as the thermal barrier coatings(TBC) for high temperature gas turbines, due to their low thermal conductivity, hightemperature thermal stability and excellent interfacial compatibility. Studies of the phaseequilibira, phase transformation, and thermodynamics of the ZrO2-based systems can providethe necessary basic knowledge t...

The trapping process of charge trapping flash with HfO2 film as the charge capture layer has been investigated by in situ electron energy-loss spectroscopy and in situ energy filter image under external positive bias. The results show that oxygen vacancies can be generated inhomogeneously in HfO2 trapping layer during the program process. The distribution of the oxygen vacancy is not same as th...

Hafnium silicate films with pure HfO2 and SiO2 samples as references were fabricated by atomic layer deposition (ALD) in this work. The optical properties of the films as a function of the film composition were measured by vacuum ultraviolet (VUV) ellipsometer in the energy range of 0.6 to 8.5 eV, and they were investigated systematically based on the Gaussian dispersion model. Experimental res...