The Mid-Brunhes Event (MBE) was one of the most important global climate events since 800 ka. deep-sea palaeoceanographic changes in Western Pacific might have been more sensitive to MBE and they not well documented yet. In this study, we investigated a core collected from Philippine Sea then obtained magnetism record around 900 signal deposition process derived concentration-dependent (χ, χARM...

This paper reports the effect of Silicon substrate orientation and Aluminum nitride buffer layer deposited by molecular beam epitaxy on growth aluminum thin films a DC magnetron sputtering technique at low temperatures. The structural analysis has revealed strong (0001) fiber texture for both Si(100) (111) substrates, hetero-epitaxial AlN layer, which is only few nanometers in size, grown MBE o...

A low-voltage test system is used to qualify various III-V semiconductor materials as photocathodes for the SLC. The system features a load lock to introduce samples, high pumping speed, a sensitive residual gas -analyzer, and an infrared temperature detector. Heat cleaning, cesiation, and oxidation procedures have been studied to optimize cathode activation for achieving an optimum NEA surface...

Single-crystal atomic-layer-deposited (ALD) Y2O3 films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE) GaAs(001)-4 ˆ 6 and GaAs(111)A-2 ˆ 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using in-situ reflection high-energy electron diffraction in our uniquely designed MBE/ALD multi-chamber system. More detailed studies on the cr...

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% i...