نتایج جستجو برای: دیکالکوژن فلزات واسطه tmdcs
تعداد نتایج: 18669 فیلتر نتایج به سال:
Ultrathin transition metal dichalcogenides (TMDCs) of Mo and W show great potential for digital electronics and optoelectronic applications. Whereas early studies were limited to mechanically exfoliated flakes, the large-area synthesis of 2D TMDCs has now been realized by chemical vapor deposition (CVD) based on a sulfurization reaction. The optoelectronic properties of CVD grown monolayer MoS2...
An emerging electronic material as one of transition metal dichalcogenides (TMDCs), tungsten disulfide (WS2) can be exfoliated as an atomically thin layer and can compensate for the drawback of graphene originating from a gapless band structure. A direct bandgap, which is obtainable in single-layer WS2, is an attractive characteristic for developing optoelectronic devices, as well as field-effe...
Two-dimensional transition metal dichalcogenides (TMDCs) have spurred excitement for potential applications in optoelectronic and valleytronic devices; however, the origin of the dynamics of excitons, trions, and other localized states in these low dimensional materials is not well-understood. Here, we experimentally probed the dynamics of excitonic states in monolayer WSe2 by investigating the...
آلودگی ناشی از فلزات سنگین در خاک نه تنها بهطور مستقیم بر خصوصیات فیزیکی و شیمیایی خاک تأثیر میگذارد، بلکه گزندی جدی برای سلامتی انسان با ورود به زنجیره غذایی و همچنین امنیت زیست محیطی و نفوذ در آبهای زیرزمینی بشمار میرود. منطقه زنجان به واسطه دارا بودن معادن فلزات سنگین، یکی از شهرهای صنعتی ایران محسوب میشود. هدف از این پژوهش، بررسی پراکنش غلظت برخی عناصر سنگین و تهیه نقشه آنها بهمنظور ...
A gate-controlled metal-semiconductor barrier modulation and its effect on carrier transport were investigated in two-dimensional (2D) transition metal dichalcogenide (TMDC) field effect transistors (FETs). A strong photoresponse was observed in both unipolar MoS2 and ambipolar WSe2 FETs (i) at the high drain voltage due to a high electric field along the channel for separating photo-excited ch...
Abstract: In the race towards two-dimensional electronic and optoelectronic devices, semiconducting transition metal dichalcogenides (TMDCs) from group VIB have been intensively studied in recent years due to the indirect to direct band-gap transition from bulk to the monolayer. However, new materials still need to be explored. For example, semiconducting TMDCs from group IVB have been predicte...
Two-dimensional (2D) semiconducting monolayer transition metal dichalcogenides (TMDCs) have stimulated lots of interest because they are direct bandgap materials that have reasonably good mobility values. However, contact between most metals and semiconducting TMDCs like 2H phase WSe2 are highly resistive, thus degrading the performance of field effect transistors (FETs) fabricated with WSe2 as...
Manipulation of spin degree of freedom (DOF) of electrons is the fundamental aspect of spintronic and valleytronic devices. Two-dimensional transition metal dichalcogenides (2D TMDCs) exhibit an emerging valley pseudospin, in which spin-up (-down) electrons are distributed in a +K (-K) valley. This valley polarization gives a DOF for spintronic and valleytronic devices. Recently, magnetic excha...
Covalent functionalization of transition metal dichalcogenides (TMDCs) is investigated for air-stable chemical doping. Specifically, p-doping of WSe(2) via NOx chemisorption at 150 °C is explored, with the hole concentration tuned by reaction time. Synchrotron based soft X-ray absorption spectroscopy (XAS) and X-ray photoelectron spectroscopy (XPS) depict the formation of various WSe(2-x-y)O(x)...
Semiconducting transition metal dichalcogenides (TMDCs) have attracted a lot of attention recently, because of their interesting electronic, optical, and mechanical properties. Among large numbers of TMDCs, monolayer of tungsten diselenides (WSe2) is of particular interest since it possesses a direct band gap and tunable charge transport behaviors, which make it suitable for a variety of electr...
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