The results of our research on the electro-optical control of MMICs are shown in this paper. Two different devices have been investigated: a GaAs chip monolithic amplifier at S band, and an AlGaAs chip MMIC voltage controlled oscillator at Ku. The possibilities of optical control of the amplifier are evidenced as follows: if the amplifier operates with the same biasing, the gain can be opticall...

Accurate modeling of nonlinear microwave devices is critical for reliable design of microwave circuit and system. In this paper, a more general neuro-space mapping (Neuro-SM) method is proposed to fulfill the needs of the increased modeling complexity. The proposed technique retains the capability of the existing dynamic Neuro-SM in modifying the dynamic voltage relationship between the coarse ...

Agrowing number of semiconductor technologies are being applied to RF power transistor applications. These technologies include Si LDMOS FET, SiGe HBT, InGaP HBT, GaAs MESFET, AlGaAs pHEMT, SiC MESFET and AlGaN/GaN HEMT. The dependencies of linearity and efficiency of such technologies are often common, such as transconductance derivatives, capacitance variations, breakdown effects and parasiti...

modulation (QAM) E-band communication system. The system can deliver 10 Gbps through eight channels with a bandwidth of 5 GHz (71-76 GHz/81-86 GHz). Each channel occupies 390 MHz and delivers 1.25 Gbps using a 16-QAM. Thus, this system can achieve a bandwidth efficiency of 3.2 bit/s/Hz. To implement the system, a driver amplifier and an RF up-/down-conversion mixer are implemented using a 0.1 μ...

Wide frequency bandwidth has been internationally allocated for unlicensed operation around the oxygen absorption frequency at 60 GHz. A power amplifier and a low noise amplifier are presented as building blocks for a T/R-unit at this frequency. The fabrication technology was a commercially available 0.15 μm gallium arsenide (GaAs) process featuring pseudomorphic high electron mobility transist...

The objective of this paper is to investigate a ultra-wideband (UWB) low noise amplifier (LNA) by utilizing a two-stage cascade circuit schematic associated with inductive-series peaking technique, which can improve the bandwidth in the 3 10 GHz microwave monolithic integrated circuit (MMIC). The proposed UWB LNA amplifier was implemented with both co-planer waveguide (CPW) layout and 0.15 μm G...

Introduction Array coil preamplifiers are subjected to large magnetic fields since they are placed close to each coil to minimize SNR losses due to cabling. Noise figure (NF) and input impedance are key parameters that must vary minimally with magnetic field strength and orientation [1,2] to ensure there are no differences in performance between the bench and the bore. In this work we compare t...

Monolithic microwave integrated circuits (MMIC’s) may be measured under relatively high-intensity lighting conditions. Later, when they are packaged, any anomalies found in subsequent measurements could be attributed to unwanted parasitics or box modes associated with the packaging. However, optical effects may not always be considered by radiofrequency (RF) and microwave engineers. For the fir...