The Triple gate FinFET architecture has emerged as a viable contender for the ultimate scalability of CMOS devices. FinFET structure offers better control over device leakage currents than the conventional bulk MOSFET structure. In this paper, we present the 6 transistor (6T) SRAM cell implementation using the 22 nm gate length FinFET devices modeled using a 3-D device simulator. The performanc...

In this proposed work we are applying valuable power gating schemes to FinFET based Schmitt trigger to enhance its performance by reducing the leakage current in standby mode (off-state mode). The power gating schemes like Sleep Transistor approach and Multi-Threshold CMOS (MTCMOS) and Double-Threshold CMOS (DTCMOS) have been analysed and simulated which shows the tremendous reduction in the le...

As technology is scaled down, the importance of leakage current and power analysis for memory design is increasing. In this paper, we discover an option for low power interconnect synthesis at the 45nm node and beyond, using Fin-type Field-Effect Transistors (FinFETs) which are a promising substitute for bulk CMOS at the considered gate lengths. We consider a mechanism for improving FinFETs eff...

—FinFET technology is prone to suffer from Line Edge Roughness (LER) based VT variation with scaling. To address this, we proposed an Epitaxially Defined (ED) FinFET (EDFinFET) as an alternate to FinFET architecture for 10 nm node and beyond. We showed by statistical simulations that EDFinFET reduces LER based VT variability by 90% and overall variability by 59%. However, EDFinFET consists of w...

In the VLSI industry, ability to anticipate variability tolerance is essential understanding circuits’ potential future performance. The cadence virtuoso tool used in this study assess how PVT fluctuations affect various fin-shaped field effect transistor (FinFET) circuits. research, high-performance FinFET-based circuits at 7 nm are discussed with a variation temperature and voltage. idea behi...

Abstract— The assessment of noise margins and the related probability of failure in digital cells has growingly become essential, as nano-scale CMOS and FinFET technologies are confronting reliability issues caused by aging mechanisms, such as NBTI, and variability in process parameters. The influence of such phenomena is particularly associated to the Write Noise Margins (WNM) in memory elemen...

FinFETs are widely used as efficient alternatives to the single gate general transistor in technology scaling because of their narrow channel characteristic. The width quantization FinFET devices helps reduce design flexibility Static Random Access Memory (SRAM) and tackles divergence between stable, write read operations. SRAM is many medical applications due its low power consumption but trad...

The sizes of commercial transistors are nanometer order, and there have already been many proposals spin qubits using conventional complementary metal–oxide–semiconductor transistors. However, most the previously proposed require wires to control a small number qubits. This causes significant “jungle wires” problem when integrated into chip. Herein, reduce complicated wiring, we theoretically c...

Double Gate FinFET devices are suitable for nano electronic circuits due to better scalability, higher on-current (Ion), improved Sub-threshold Slope (SS) and undoped body (no random dopant fluctuation). Body thickness (TSi) increases the gate control over the channel resulting in reduced short channel effects (SCEs). Thin Tsi increases the quantum confinement of charge, resulting increased thr...