Bright room temperature visible emission is obtained in heterostructures consisting of approximately 3.5 nm thick ZnO ultrathin films grown on Si-nanowires produced by means of self-masking dry etching in hydrogen-containing plasma. The ZnO films were deposited on Si-nanowires by using atomic layer deposition (ALD) under an ambient temperature of 25 degrees C. The orders of magnitude enhancemen...

In vapor-liquid-solid (VLS) growth, it is generally believed that nanowires would grow as long as the right catalysts and substrate are supplied as well as the growth temperature is adequate. We show here, however, that oxygen partial pressure plays a key role in determining the quality of the aligned ZnO nanowires. We present a "phase diagram" between the oxygen partial pressure and the growth...

We have investigated the growth of ZnO nanowires on curved BaTi03 retroreflector beads, as well as grov.1h of ZnO nanowires on flat substrates. Results indicate that the growth of ZnO aligned nanowire arrays occurs farther away from the Zn source in the retroreflectors, while the results are opposite for the flat Si substrates. In the case of the ZnO nanowires on flat Si, the nanowires formed i...

The fabrication of nanostructures having diameters of sub-5 nm is very a important issue for bottom-up nanofabrication of nanoscale devices. In this work, we report a highly controllable method to create sub-5 nm nano-trenches and nanowires by combining area-selective atomic layer deposition (ALD) with single-walled carbon nanotubes (SWNTs) as templates. Alumina nano-trenches having a depth of ...

Quasi-one-dimensional (quasi-1D) ZnO nanowire arrays with hexagonal pattern have been successfully synthesized via the vapor transport process without any metal catalyst. By utilizing polystyrene microsphere self-assembled monolayer, sol-gel-derived ZnO thin films were used as the periodic nucleation sites for the growth of ZnO nanowires. High-quality quasi-1D ZnO nanowires were grown from nucl...

In this study, ZnO nanoparticles (ZnO NPs) were conformally covered on the surfaces of ZnO nanowires (ZnO NWs) with high diffusion coefficient (1.2 × 10(-2) cm(2) s(-1)) to make a composite photoanode. By using N719 to sensitize the composite photoanode, the conversion efficiency can reach 7.14%.

An inexpensive single-step carbon-assisted thermal evaporation method for the growth of SnO2-core/ZnO-shell nanostructures is described, and the ethanol sensing properties are presented. The structure and phases of the grown nanostructures are investigated by field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques. XRD a...

The Research on Preparation of ZnO Nano-material and Photoelectric Devices Zinc Oxide (ZnO) is a wide band gap semiconductor material, which has a band gap of 3.37 eV at room temperature, its most important characteristic is the high exciton bounding energy of 60 meV. Based on these characteristics, ZnO has potential applications in short wavelength photoelectric devices. Since nanodevices such...

Zinc oxide is a unique material that exhibits exceptional semiconducting, piezoelectric, and pyroelectric properties. Nanostructures of ZnO are equally as important as carbon nanotubes and silicon nanowires for nanotechnology and have great potential applications in nanoelectronics, optoelectronics, sensors, field emission, light-emitting diodes, photocatalysis, nanogenerators, and nanopiezotro...