The research results of coal characterization using the XPS method are summarized. Microsoft Visual Studio.net is utilized to build a database functional group characterization for coal, which contains over 1000 records including the kind of functional group, binding energy value, coal specie, producing area, sample preparation, and literature information. The database can be used to search and...

In the present study, tin-promoted Pd/MWNTs nanocatalystwas synthesized via polyol technique for application in hydrogenation of high-concentrated acetylene feedstocks. TEM images showed a restricted distribution of nanoparticles in the range of 3-5 nm. The results indicated that nanoparticles sizes were resistant to further catalyst deactivation. XRD patterns signified alloying between Pd and ...

Hafnium oxide layer was deposited on unheated silicon wafer and glass substrates at different power by using RF magnetron sputtering technique. The structural property investigated Raman spectroscopy. Moreover, HfO2 structure in monoclinic major phase especially high found from the spectra vibrational modes. In addition, oxidations state of hafnium thin films gained synchrotron-based X-ray abso...

Nanocharacterization is essential for nanoengineering of new types of core-shell (c-s) nanoparticles, which can be used to design new devices for photonics, electronics, catalysis, medicine, etc. X-ray photoelectron spectroscopy (XPS) has been widely used to study the elemental composition of the c-s nanoparticles. However, the physical and chemical properties of a c-s nanoparticle dramatically...

Rh nanoparticles have been fabricated by the evaporation method using the He gas in the Rh evaporation chamber, connected with the pre-evacuation chamber of BL6N1 at Aichi Synchrotron Radiation Center (Aichi SR). The electronic and geometric properties of the Rh nanoparticles have been verified without atmosphere exposure (in situ XPS) and after atmosphere exposure (ex situ XPS) using SR-XPS an...

A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle reso...