let a(p) denote the class of functions which are analytic in the open unit disk u. by making use of certain integral operator,we obtain some interesting properties of multivalent analytic functions.

in this paper‎, ‎using a generalized dunkl translation operator‎, ‎we obtain a generalization of titchmarsh's theorem for the dunkl transform for functions satisfying the$(psi,p)$-lipschitz dunkl condition in the space $mathrm{l}_{p,alpha}=mathrm{l}^{p}(mathbb{r},|x|^{2alpha+1}dx)$‎, ‎where $alpha>-frac{1}{2}$.

A challenge for educators is to fuse the learning of information literacy to an academic education in such a way that the outcome is systematic and sustainable learning for students. This challenge can be answered through longterm commitment to information literacy education bound to organisation-wide, renewable strategic planning and driven through systemic reform. This paper explores the proc...

Dialogism provides the grounds for building a comprehensive model of discourse and it is focused on the multiplicity of perspectives (i.e., voices). Dialogism can be present in any type of text, while voices become themes or recurrent topics emerging from the discourse. In this study, we examine the extent that differences between self-explanations and thinkalouds can be detected using computat...

in this paper we obtain coefficient characterization‎, ‎extreme points and‎ ‎distortion bounds for the classes of harmonic $p-$valent functions‎ ‎defined by certain modified operator‎. ‎some of our results improve‎ ‎and generalize previously known results‎.

In this paper we obtain coefficient characterization‎, ‎extreme points and‎ ‎distortion bounds for the classes of harmonic $p-$valent functions‎ ‎defined by certain modified operator‎. ‎Some of our results improve‎ ‎and generalize previously known results‎.

A dependable and robust technique for nanomachining is ion implantation. In this work, hydrogen (H) implantation was used, the first time, to passivate p-GaN, except gate area, in order create a normally off p-GaN/AlGaN/GaN high-electron-mobility transistor (HEMT). Ion passivation reduces H diffusion allowing it withstand temperatures above 350 °C. Through experiments analyses, energy dosage re...