نتایج جستجو برای: vertical diametric strain

تعداد نتایج: 311108  

2003
THOMAS H. WILSON KAZUHIKO KANO OSAMU NISHIZAWA

Regional and local characteristics of active fault patterns and elevation variation throughout Honshu, Japan are characterized in terms of their fractal dimensions; this allows variation in these complex variables to be compared directly to the scalar properties of net Quaternary vertical displacement, elevation and 10and 110-year horizontal strains. The comparisons reveal that, throughout Hons...

2012

The angle resolution and accuracy of magnetic position encoders with a diametric magnet and central scanning Hall sensor IC are limited by the feasible depth of interpolation and available field quality. By scanning many sine periods per revolution, the resolution of optical position encoders is much higher. If magnetic pole wheels are used, this approach can also be applied to magnetic systems...

Journal: :Nanoscale 2016
Yuewen Sheng Wenshuo Xu Xiaochen Wang Zhengyu He Youmin Rong Jamie H Warner

Creating alternating layers of 2D materials forms vertical heterostructures with diverse electronic and opto-electronic properties. Monolayer WS2 grown by chemical vapour deposition can have inherent strain due to interactions with the substrate. The strain modifies the band structure and properties of monolayer WS2 and can be exploited in a wide range of applications. We demonstrate a non-aque...

Journal: :Journal of applied physiology 2010
Richard G P Lopata Johannes P van Dijk Sigrid Pillen Maartje M Nillesen Huub Maas Johan M Thijssen Dick F Stegeman Chris L de Korte

In this study, a multidimensional strain estimation method using biplane ultrasound is presented to assess local relative deformation (i.e., local strain) in three orthogonal directions in skeletal muscles during induced and voluntary contractions. The method was tested in the musculus biceps brachii of five healthy subjects for three different types of muscle contraction: 1) excitation of the ...

1997
N. Davies P. Francis-Cobley

The two technologies adopt diametric opposite approaches to QoS issues. ATM acts in a declarative manner – “this is the QoS I would like/require”. LAN protocols describe the QoS in an operational manner – “this is the portion of the system bandwidth I want every 125μs”. These two approaches mean that there is a definite need for a gateway between the two QoS models. Such a gateway is also likel...

Journal: :Computers & Geosciences 2015
Mohammad Ali Goudarzi Marc Cocard Rock Santerre

We developed an open source software for crustal strain analysis using the least-squares collocation method based on the spherical model of the earth. The software is able to simultaneously determine the signal and noise of the velocities at the observation points with the best possible removal of the observational errors, or at any other position with no velocity observation. Furthermore, the ...

1999
F. Nitzsche D. G. Zimcik T. G. Ryall R. W. Moses D. A. Henderson

In the present investigation, the results obtained during the ground test of a closed-loop control system conducted on a full-scale fighter to attenuate vertical fin buffeting response using strain actuation are presented. Two groups of actuators consisting of piezoelectric elements distributed over the structure were designed to achieve authority over the first and second modes of the vertical...

Journal: :Journal of endodontics 1999
V Lertchirakarn J E Palamara H H Messer

Vertical loads and root surface strains in extracted teeth during lateral condensation using finger and hand spreaders were measured and compared with loads and strains at fracture. Six groups each of 10 teeth were tested: maxillary central incisor, premolar and molar; and mandibular incisor, premolar and molar. Root strains were measured using strain gauges mounted on the apical and middle thi...

Journal: :ACS nano 2012
Weihua Han Yusheng Zhou Yan Zhang Cheng-Ying Chen Long Lin Xue Wang Sihong Wang Zhong Lin Wang

Strain-gated piezotronic transistors have been fabricated using vertically aligned ZnO nanowires (NWs), which were grown on GaN/sapphire substrates using a vapor-liquid-solid process. The gate electrode of the transistor is replaced by the internal crystal potential generated by strain, and the control over the transported current is at the interface between the nanowire and the top or bottom e...

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