This paper presents results of investigation on the effects of technology on the performance of the class E power amplifier circuit. A typical class E circuit has been designed and simulated, for a typical UMTS Tx frequency (1.95 GHz) and output power ( 27dBm). Three different technologies have been used (silicon BJT, CMOS and GaAs HBT) and several important parameters (output efficiency, power...

In this letter, novel class-F and inverse class-F power amplifier (PA) topologies were proposed, simulated, realized and measured for 2.7–2.9GHz frequency band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations are made on Rogers TMM3 dielectric material which has 0.381mm thickness and 3.27 dielectric constant. Proposed class-F and inverse class-F PAs have 10W (...

Domestic gardens provide residents with immediate access to landscape amenities and numerous ecological provisions. These provisions have been proven be largely determined by greenspace composition landscape, but the fragmentation heterogeneity of garden environments present challenges mapping. Here, we first developed a recognition method create parcel data set in medieval Leuven city Belgium,...

The objective of this research was to design a 2.4 GHz class AB Power Amplifier (PA), with 0.18um Semiconductor Manufacturing International Corporation (SMIC) CMOS technology by using Cadence software, for health care applications. The ultimate goal for such application is to minimize the trade-offs between performance and cost, and between performance and low power consumption design. This pap...

—A 48 GHz fully integrated two stages power amplifier (PA) for mm-wave application is presented in this paper. The PA is implemented in 90 nm LP CMOS technology with Cascode topology to enhance gain and stability. The single ended PA achieves around 15 dB small signal gain, 4.5 dBm saturated output power and a peak power added efficiency of 9% in measurement. Patterned ground shield coplanar tr...

The Internet is rapidly changing from a set of wires and switches that carry packets into a sophisticated infrastructure that delivers a set of complex value-added services to end users. Services can range from bit transport all the way up to distributed value-added services like video teleconferencing, data mining, and distributed interactive simulations. Before such services can be supported ...

One of the most important requirements that RF and microwave power amplifiers designed for radiocommunication systems must meet is an optimum power added efficiency (PAE) or an optimal combination of PAE and linearity. A harmonic active load–pull system which allows the control of the first three harmonic frequencies of the signal coming out of the transistor under test is a very useful tool to...

A Class F power amplifier (PA) at 2.5GHz has been designed and fabricated. Test results show 15.7 dB gain with 75.75% power added efficiency (PAE ), at an input level of 25 dBm. The design procedure is presented, with various issues illustrated and addressed. A new method is proposed to obtain the optimum load and source impedances without iterations, which would usually be necessary.

This paper presents a new procedure to design of high efficiency class E power amplifiers (PAs) using nonlinear transistors. The active device (MESFET-ATF34143) has been investigated and load harmonic networks have also been designed to match the requirement. By using the new procedure, the power added efficiency (PAE) of PAs could be increased to over 70%. The effect of the stabilized resistor...