نتایج جستجو برای: ultralight high voltage

تعداد نتایج: 2134435  

2017

GaN FETs offer superior advantages in high-voltage and high-temperature operation due to its large bandgap (3.4 eV) and high breakdown field strength (3.3 MV/cm). This combination of the large bandgap and high breakdown field makes these devices very attractive for power switching applications. In this regard, a key figure of merit is the breakdown voltage of the transistor, which must be high ...

Journal: :journal of advances in computer research 0
behzad ghanavati department of electrical engineering, college of electrical engineering, mahshahr branch, islamic azad university, mahshahr ,iran

a high accurate and low-voltage analog cmos current divider which operates with a single power supply voltage is designed in 0.18µm cmos standard technology. the proposed divider uses a differential amplifier and transistor in triode region in order to perform the division. the proposed divider is modeled with neural network while tlbo algorithm is used to optimize it. the proposed optimization...

2002
Jean-Daniel Nicoud Jean-Christophe Zufferey

Developing a research autonomous plane for flying in a laboratory space is a challenge that forces one to understand the specific aerodynamic, power and construction constraints. In order to obtain a very slow flight while maintaining a high maneuverability, ultralight structures and adequate components are required. In this paper we analyze the wing, propeller and motor characteristics and pro...

2001
Stefan Schulz Christian Pylatiuk Georg Bretthauer

In this paper a very lightweight artificial hand is presented that approximates the manipulation abilities of a human hand very well. A large variety of different objects can be grasped reliably and the movements of the hand appear to be very natural. This five finger hand has 13 independent degrees of freedom driven by a new type of powerfull small size flexible fluidic actuator. The actuators...

Journal: :Journal of High Energy Physics 2019

Journal: :Veruscript Functional Nanomaterials 2017

2001
Gia Dvali Gregory Gabadadze M. Shifman

We study some possible astrophysical implications of a very weakly coupled ultralight dilaton-type scalar field. Such a field may develop an (approximately stable) network of domain walls. The domain wall thickness is assumed to be comparable with the thickness of the luminous part of the spiral galaxies. The walls provide trapping for galactic matter. This is used to motivate the very existenc...

In this work, a non-isolated high step up DC-DC converter using coupled inductor and voltage multiplier cell is proposed. The proposed converter conversion ratio is efficiently extended by using a coupled inductor. An interleaved configuration of two diode-capacitor cells is applied to step up the voltage conversion ratio and decrease the voltage stress across the switches. Also, in the suggest...

Journal: :IOP Conference Series: Materials Science and Engineering 2021

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