نتایج جستجو برای: type ii heterostructure
تعداد نتایج: 1799788 فیلتر نتایج به سال:
b a ckground: the objective was to investigate the relationship between serum interleukin-18 (il-18), pentraxin 3 (ptx3), and high-sensitivity c-reactive protein (hs-crp) levels with body mass index (bmi) and abdominal obesity and also the interaction between genetic variants of apolipoprotein a-ii (apo a-ii) and obesity on the levels of these factors in type 2 diabetes patients (t2d). m ethods...
objective(s) articular cartilage tissue defects cannot be repaired by the proliferation of resident chondrocytes. autologous chondrocyte transplantation (act) is a relatively new therapeutic approach to cover full thickness articular cartilage defects by in vitro grown chondrocytes from the joint of a patient. therefore, we investigated the redifferentiation capability of human chondrocytes mai...
Heterostructure field-effect transistor design criteria are proposed in this study. GaAs pseudomorphic high electron mobility transistors (pHEMTs) are extensively applied to radar satellite receipt dispatcher antenna, and cell phone. Devices for various doped type and different material heterostructure are simulated and analyzed. The δ-doped InGaP/InGaAs/GaAs pHEMT with high density of two dime...
Recombination dynamics in CdTe/CdSe core-shell type-II quantum dots (QDs) has been investigated by time-resolved photoluminescence (PL) spectroscopy. A very long PL decay time of several hundred nanoseconds has been found at low temperature, which can be rationalized by the spatially separated electrons and holes occurring in a type-II heterostructure. For the temperature dependence of the radi...
In this work, we demonstrate a facile successive ionic layer adsorption and reaction process accompanied by hydrothermal method to synthesize CdS nanoparticle-modified α-Fe2O3/TiO2 nanorod array for efficient photoelectrochemical (PEC) water oxidation. By integrating CdS/α-Fe2O3/TiO2 ternary system, light absorption ability of the photoanode can be effectively improved with an obviously broaden...
It has been recently shown that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation with the optimization of dopant and/or radiation defects leads to increase the sharpness of p-n-junctions (both single p-n-junctions and p-n-junctions framework their system). Due to the optimization, one can also obtain increas...
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Using ab initio calculations, we have investigated the electronic properties of bidimensional ferroelectric heterostructure In2Se3/Bi2Se3. Depending on direction polarization vector In2Se3 layer, found that In2Se3/Bi2Se3 can either a direct or an indirect bandgap, with values 0.67 1.00 eV obtained GW approximation. Also this material presents type II band alignment and appears to be promising s...
P-channel GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistors (MOSHFETs) utilising a polarization induced two Dimensional Hole Gas (2DHG) operate inherently in depletion mode (D-mode). The condition for their conversion to E-mode operation is examined via analytical expressions for the threshold voltage and verified via TCAD simulations. Between the two heterostructures (i) c...
By tracking the delocalized states of the two-dimensional hole gas in a p-type GaAs/AlGaAs heterostructure as a function of magnetic field, we mapped out a phase diagram in the density magnetic field plane. We found that the energy of the delocalized state from the lowest Landau level flattens out as the magnetic field tends toward zero. This finding is different from that for the two-dimension...
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