Titanium nitride (TiN) thin films deposited by high-power pulsed magnetron sputtering usually have a high compressive residual stress, which is not conducive for the adherence of TiN films. This study investigated potential Ti2AlN releasing stress HPPMS-deposited and evaluated strength hardness TiN/Ti2AlN multilayers introducing MAX phase to form multilayers. The results showed that smooth with...

*Correspondence: Ram K. Gupta, Department of Chemistry, Pittsburg State University, 1701 South Broadway, Pittsburg, KS-66762, USA e-mail: [email protected] Epitaxial tin ferrite (SnFe2O4) thin films were grown using KrF excimer (248 nm) pulsed laser deposition technique under different growth conditions. Highly epitaxial thin films were obtained at growth temperature of 650°C. The quality a...

This paper reports the synthesis and characterization of fluorine-doped tin oxide (FTO) thin films via intermittent spray pyrolysis utilizing a solution mixture of tin chloride pentahydrate and ammonia fluoride. Utilizing the same solution, nanorod arrays were fabricated via template-based growth. Uniform and crack-free FTO films over 20×20 mm with a thickness up to 900 nm have been routinely a...

A Fluidized Bed Metal–Organic Chemical Vapor Deposition (FB-MOCVD) process was developed for the growth of tin oxide thin films on large hollow Ni particles. Tetraethyl tin was used as tin source and dry air both as fluidization gas and oxidant reagent. The SnO2 films were grown in a FBCVD reactor under reduced pressure (13.3 kPa) in the temperature range of 633–663 K. A series of specific expe...

Broadband antireflection and field emission characteristics of silicon nanopillars (Si-NPs) fabricated by self-masking dry etching in hydrogen-containing plasma were systematically investigated. In particular, the effects of ultrathin (5-20 nm) titanium nitride (TiN) films deposited on Si-NPs by atomic layer deposition (ALD) on the optoelectronic properties were explored. The results showed tha...

Tin-doped indium oxide (ITO) thin films have been widely used as transparent electrodes of flat panel displays and solar cells because of its low electrical resistivity and high transmittance to visible light. In order to improve the electrical and optical properties of ITO thin films, many attempts have been carried out by means of several methods, for example, highly dense plasma assisted ele...

Thin film solar cells made from earth-abundant, non-toxic materials are needed to replace the current technology that uses Cu(In,Ga)(S,Se)2 and CdTe, which contain scarce and toxic elements. One promising candidate absorber material is tin monosulfide (SnS). In this report, pure, stoichiometric, single-phase SnS films were obtained by atomic layer deposition (ALD) using the reaction of bis(N,N’...

Different oxidation states of titanium nitride thin films, including pure TiN(h 0 0), TiN1−xOx(h 0 0), Ti2O3(0 0 l) and pure anatase TiO2(0 0 l), were prepared by pulsed laser deposition with various oxygen pressures (PO2) using a TiN target. Elaborative evolutions of the crystal and electronic structures of the obtained films were examined systematically by x-ray diffraction and x-ray absorpti...

Titanium nitride (TiN), a stable compound with the NaCl structure, has a wide range of properties which find applications in cutting tools, wear resistant parts, semiconductor metallization, and the jewelry industry. However, there are problems with preparing highly adhesive thin films which maintain good properties. Thin films of titanium nitride have been prepared by the Electron Shower (ES) ...

Reactions of R(2)SnCl(2) (R = Me, Et, (t)Bu) with NaSeC(5)H(3)(R'-3)N (R' = H or Me) gave complexes of the composition [R(2)Sn{2-SeC(5)H(3)(R'-3)N)}(2)], which on treatment with R(2)SnCl(2) afforded chloro complexes, [R(2)Sn{2-SeC(5)H(3)(R'-3)N}Cl]. These complexes were characterized by elemental analyses and UV-vis and NMR ((1)H, (13)C, (77)Se and (119)Sn) spectroscopy. The crystal structures ...