نتایج جستجو برای: ti si mixed oxides

تعداد نتایج: 345210  

2016
Csaba Hegedűs Chia-Che Ho Attila Csik Sándor Biri Shinn-Jyh Ding

The surface properties of metallic implants play an important role in their clinical success. Improving upon the inherent shortcomings of Ti implants, such as poor bioactivity, is imperative for achieving clinical use. In this study, we have developed a Ti implant modified with Ca or dual Ca + Si ions on the surface using an electron cyclotron resonance ion source (ECRIS). The physicochemical a...

Journal: :Dental materials journal 2004
Yukun Meng Akira Nakai Hideo Ogura

Different reducing agents (B, Al, Si and Ti) were individually added to two gypsum-bonded investments to prepare investments preventing surface blackening of some noble cast alloys. The effect of different additive contents on green-body and burnout compressive strength, setting and thermal expansion of the investments were evaluated. The strength and expansion of the investments were changed b...

2016
M. Lukosius C. Baristiran-Kaynak V. Kubilius A. Zauner

Ce–Al–O thin films were prepared on 70 nm TiN/Si(1 0 0) substrates by pulsed injection metal organic chemical vapor deposition (PI-MOCVD) for metal–insulator–metal (MIM) applications. Depositions were carried out at 400 C using two separate Ce and Al precursors. In order to get Ce–Al–O films with different stoichiometry, Al2O3 and CeO2 were mixed with different Ce:Al precursors’ ratios. Accordi...

2009
Gustav Edman Jönsson Hans Högberg Lars Hultman

Abstract Today gold is used as contact material on electric contacts for low current applications. Gold, however, has low wear resistance, is expensive and environmentally stressful to produce. An alternative contact material to gold is nano composite Ti-Si-C-Ag deposited with DC-magnetron sputtering. Nano composite Ti-Si-C-Ag has so far been deposited by a compound Ti-Si-C sputter target with ...

2016
Xijiang Zhao Tao Wang Shi Qian Xuanyong Liu Junying Sun Bin Li

While titanium (Ti) implants have been extensively used in orthopaedic and dental applications, the intrinsic bioinertness of untreated Ti surface usually results in insufficient osseointegration irrespective of the excellent biocompatibility and mechanical properties of it. In this study, we prepared surface modified Ti substrates in which silicon (Si) was doped into the titanium dioxide (TiO₂...

Journal: :Inorganic chemistry 2001
A J Norquist K R Heier P S Halasyamani C L Stern K R Poeppelmeier

Crystalline KTiOPO4 (KTP), an inorganic nonlinear optical material with a waveguide figure-of-merit that is twice that of other mixed-metal oxides, contains helical chains of TiO(4/2)O(2/2) octahedra in which a long, short Ti-O bond motif results in a net c-directed polarization. The alternating long and short Ti-O bonds that occur along these chains are the major contributors to the large nonl...

Journal: :journal of advanced materials and processing 0
mohammad hassan dadkhah tehrani malek-ashtar university of technology 83145-115, isfahan, ir iran. abdolreza jafari tadi malek-ashtar university of technology yaghoub yaghoubi askarabad islamic azad university 81595-158, isfahan, ir iran. majid karimian islamic azad university 81595-158, isfahan, ir iran. kamran amini islamic azad university 81595-158, isfahan, ir iran. mohammad hossein dadkhah tehrani malek-ashtar university of technology 83145-115, isfahan, ir iran.

in the present work, structural characteristics and tribological properties of the ti-al-cr-(si)-c-n nanocomposite films coated on the spk 1.2080 tool steel bypvd technique have been investigated. the pvd coating process was carried out using ti (si) al and cral cathodes at 150 a current, 40 v bias and (ar)0.1(ch4)0.45(n2)0.45 gas mixture for 50 min. evaluations were conducted by om, fesem, afm...

2012
A. P. Huang Z. C. Yang Paul K. Chu

Scaling of silicon dioxide dielectrics has once been viewed as an effective approach to enhance transistor performance in complementary metal-oxide semiconductor (C-MOS) technologies as predicted by Moore’s law [1]. Thus, in the past few decades, reduction in the thickness of silicon dioxide gate dielectrics has enabled increased numbers of transistors per chip with enhanced circuit functionali...

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