The underwater contact angle behavior on oxide layers of varying thicknesses was studied. These oxide layers were grown by thermally oxidizing C84400 copper alloys in N2-0.75 wt.% O2 and N2-5 wt.% O2 gas mixtures at 650 °C. Characterization of the oxidized specimens was effected using X-ray diffraction, scanning electron microscope (SEM) and contact angle goniometer. The results from the X-ray ...

The properties of the oxide films grown on 308 L SS cladding with various surface treatments and temperatures in simulated PWR primary water are studied. thickness inner layer increases decrease roughness. high oxidation resistance ground is due to thicker fine-grained dislocations density subgrain boundaries near-surface. ferrite-affected zone (FAOZ) expands increase temperature, resulting fro...

Atom probe tomography, APT, is the only microstructural method that can routinely analyse and position individual atoms in a material with a spatial resolution of 0.1-0.5 nm. Recent implementation of pulsed-laser to APT made investigation of less conducting materials, such as oxides, feasible. In this paper a short description of the principle of the techniques is presented. It is followed by e...

Surface relief formed by nanoimprinting and etching into a thermally grown SiO2 layer on Si was used to position the initial nuclei formed by chemically vapor deposited Si and Ge. By controlling the deposition conditions, the surface diffusion length was adjusted to be comparable to or larger than the spacing between features, thus favoring nucleation adjacent to steps, rather than random nucle...

The scaling limit for VLSI gate oxide (SiO 2 ) is 15}20 As that is determined by the large direct-tunneling leakage current. Further scaling to improve device performance can be obtained using a higher dielectric constant material. We have studied the Al 2 O 3 to use as an alternative gate dielectric. To ensure good quality, Al 2 O 3 is thermally oxidized from MBE-grown AlAs or Al on Si-substra...

Effect of nano-structuration and compounding of YSZ APS TBCs investigated on coating behavior in thermal shock conditions. The coatings were applied on Inconel 738 discs with three different thickness per powder. In order to harmonize the results from the samples, performance factor is defined as a criterion that in the starting of the activity has an amount of about 100 and is reduced after th...

Heterogeneous integration of β-(Sn x Ga 1− ) 2 O 3 (TGO) UV-C photodetectors on silicon substrates by molecular beam epitaxy is demonstrated. Multimodal electron microscopy and spectroscopy techniques reveal a direct correlation between structural, compositional, optical properties TGO the functional photodetectors. Wavelength dispersive x-ray results accurately determine Sn concentrations ( x)...

E' centers (trivalent silicons) in two silicate systems, thermally grown SiO 2 films on silicon and high surface area bulk sol-gel silicates, have been investigated. In the thermally grown silicon dioxide films, earlier work is extended by demonstrating that the hole trapping process is reversible; no complex structural rearrangement occurs at the hole trapping site (E' centers) after subsequen...

Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation" (1998). Optical constant spectra for silicon and thermally grown silicon dioxide have been simultaneously determined using variable angle of incidence spectroscopic ellipsometry from 0.75 to 6.5 eV. Spectroscopic ellipsometric data set...

The ion implantation of heavy dopant species through very thin silicon oxide gate insulators d?grades the insulating properties of the oxide inducing an enhanced leakage current in MOS siructures as well as a decrease of the dielectric breakdown voltage. In the present work we study quantitatively the possible physico-chemical causes of these degradation phenomena a l d of their recovery by the...