We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal-organic chemical vapor deposition (MOCVD). The MBE-grown buffer layer was composed of GaN nanograins exhibiting an ordered surface and preferred orientation along the ...

We report on the high-resolution photoluminescence (PL) and electron spin resonance (ESR) studies of highly Er-doped (2× 1020 to × 1021 cm−3) MOCVD grown GaN epilayers. The high-resolution Fourier transform of the 4I → 4I PL of Er3+ near 1.5 m, site-selective 13/2 15/2 L and PL excitation measurements show that in MOCVD grown GaN only one type of Er-centers exists. This conclusion has been conf...

As one of the approaches to improve p-HEMT, we studied effect misorientation GaAs substrates on surface morphology, structure, and electrical properties pseudomorphic heterostructures, as well parameters transistors based them. In a single technological cycle, heterostructures were formed vicinal with (100) orientation misoriented by 2 o (110) method MOCVD (MOCVD) in cycle. It has been establis...

The direct integration of GaN with Si can boost great potential for low-cost, large-scale, and high-power device applications. However, it is still challengeable to directly grow on without using thick strain relief buffer layers due their large lattice thermal-expansion-coefficient mismatches. In this work, a GaN/Si heterointerface any layer successfully fabricated at room temperature via surf...

This study reports a non-destructive method of measuring the residual strain in the GaN epilayer grown on sapphire substrate by micro-Raman spectroscopy. Operating in confocal mode this method allows a depth-dependent measurement of residual strain in the epitaxial layer without prior treatment of the sample. This approach to measurement of residual strain is demonstrated on GaN epitaxial films...

InAs/GaSb type II superlattices were grown on (100) GaSb substrates by metalorganic chemical vapor deposition (MOCVD). A plane of mixed As and Sb atoms connecting the InAs and GaSb layers was introduced to compensate the tensile strain created by the InAs layer in the SL. Characterizations of the samples by atomic force microscopy and high-resolution X-ray diffraction demonstrate flat surface m...

Thin film (15-130 nm) of gallium oxide were grown by the industry relevant metal organic chemical vapour deposition (MOCVD) technique on p-type Si to check the possibility for integration of newly rediscovered wide bandgap material with the Si technology. Electric, dielectric and optical properties were studied and analyzed. Тo perform electrical characterization, Ga2O3 films were integrated in...