نتایج جستجو برای: surface alloying

تعداد نتایج: 639565  

Journal: :Journal of Physics: Conference Series 2008

Journal: :Engineering and Applied Sciences 2018

2010
G. J. Liu K. Mimura M. Isshiki

The influence of alloying element S, Se or Te on the oxidation resistance of pure Cu was studied by oxidizing in 0.1 MPa pure oxygen atmosphere at 573-873 K in comparison with a 6N Cu (99.9999 wt.%). The addition of S, Se or Te is found to improve the oxidation resistance of Cu remarkably. This improvement is contributed from the accumulation of alloying element at the Cu2O/Cu interface and seg...

Journal: :Journal of physics 2023

Abstract The use of magnesium alloys in aerospace is relatively restricted by their poor ignition resistance performance. A continuous heating test was conducted to investigate the pure Mg, ZM5, and ZM6 with different alloying elements. It found that elements greatly influenced alloys. With about 2% addition Nd rare earth element, had a higher temperature than Mg. In comparison, which contains ...

2011
Chunling Qin Weimin Zhao Akihisa Inoue

This paper reviews the influence of alloying elements Mo, Nb, Ta and Ni on glass formation and corrosion resistance of Cu-based bulk metallic glasses (BMGs). In order to obtain basic knowledge for application to the industry, corrosion resistance of the Cu-Hf-Ti-(Mo, Nb, Ta, Ni) and Cu-Zr-Ag-Al-(Nb) bulk glassy alloy systems in various solutions are reported in this work. Moreover, X-ray photoe...

2016
P. Sallamand J. Pelletier P. SALLAMAND

There is a large interest in using high power lasers for surface alloying or cladding on aluminium alloys, in order to enhance hardness and to improve wear resistance. A partly quasicrystalline surface layer (QC) (Al-Cu-Fe coating) has been obtained by laser cladding on Al-base materials. In addition to crystalline phases (Al5Fe2 and AlisFe4t -with dissolved copper), a quasicrystalline Al-Cu-Fe...

2006
S. Scott Collis Jean Lee Jonathan Zimmerman

The atomic surface structure of compound semiconductors plays a large role in the growth of semiconductor films and the final microstructure of the film. During growth of InxGa1−xAs films, a mixed-termination surface consisting of a (4x3) reconstruction with common binary InAs or GaAs reconstructions, such as the α2(2x4), has been observed. We have used Density Functional Theory (DFT) to determ...

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