The goal of this paper is to review in brief the basic physics of nanoelectronic device single-electron transistor [SET] as well as prospective applications and problems in their applications. SET functioning based on the controllable transfer of single electrons between small conducting "islands". The device properties dominated by the quantum mechanical properties of matter and provide new ch...

We consider resonant vortices around nodal points of the wavefunction in electron transport through a mesoscopic device. With a suitable choice of the device geometry, the dominating role is played by single vortices of a preferred orientation. To characterize strength of the resulting magnetic moment we have introduced a magnetance, the quantity defined in analogy with the device conductance. ...

Quantum dots defined in carbon nanotubes are a platform for both basic scientific studies and research into new device applications. In particular, they have unique properties that make them attractive for studying the coherent properties of single-electron spins. To perform such experiments it is necessary to confine a single electron in a quantum dot with highly tunable barriers, but disorder...

The electron-multiplying charge-coupled device (EMCCD) camera possesses an electron multiplying function that can effectively convert the weak incident photon signal to amplified electron output, thereby greatly enhancing the contrast of the acquired images. This device has become a popular photon detector in single-cell biophysical assays to enhance subcellular images. However, the quantitativ...

Single electron transistors (SET) are fabricated from multiwalled carbon nanotubes (MWNT) by manipulation with an atomic force microscope. The devices consist of either a single MWNT with Au contacts at the ends or of two crossing tubes. In the latter device, the lower nanotube acted as the central island of a single electron transistor while the upper one functioned as a gate electrode. Coulom...

– Background charge rearrangements in metallic single–electron transistors are modelled in two–level tunnelling systems as a Poisson process with a scale parameter as only variable. The model explains the recent observation of asymmetric Coulomb blockade peak spacing distributions in metallic single–electron transistors. From the scale parameter we estimate the average size of the tunnelling sy...

Conductance through a system consisting of a wire with side-attached quantum dots is calculated. Such geometry of the device allows to study the coexistence of quantum interference, electron correlations and their influence on conductance. We underline the differences between ”classical” Fano resonance in which the resonant channel is of single-particle nature and ”many-body” Fano resonance wit...

Spintronics relies on the ability to transport and use the spin properties of an electron rather than its charge. We describe a spin ratchet at the single-electron level that produces spin currents with no net bias or charge transport. Our device is based on the ground-state energetics of a single-electron transistor comprising a superconducting island connected to normal leads via tunnel barri...

Herein we report the synthesis and characterization of a series of 6,12-diarylindeno[1,2-b]fluorenes (IFs). Functionalization with electron donor and acceptor groups influences the ability of the IF scaffold to undergo two-electron oxidation and reduction to yield the corresponding 18- and 22-π-electron species, respectively. A single crystal of the pentafluorophenyl-substituted IF can serve as...