Herein we report the demonstration of electrochemical deposition of silicon p-n junctions all in molten salt. The results show that a dense robust silicon thin film with embedded junction formation can be produced directly from inexpensive silicates/silicon oxide precursors by a two-step electrodeposition process. The fabricated silicon p-n junction exhibits clear diode rectification behavior a...

This research demonstrates that an indium tin oxide–silicon oxide–hafnium aluminum oxide‒silicon device with enhanced UV transparency ITO gate (hereafter E-IOHAOS) can greatly increase the sensing response performance of a SONOS type ultraviolet radiation total dose TD) sensor. Post annealing process is used to optimize optical transmission and electrical resistivity characterization in film. V...

The narrowest feature of an integrated circuit is the silicon dioxide gate dielectric (3±5 nm). The viability of future CMOS technology is contingent upon thinning the oxide further to improve drive performance, while maintaining reliability. Practical limitations due to direct tunneling through the gate oxide may preclude the use of silicon dioxide as the gate dielectric for thicknesses less t...

Defects in the near sidewall region in selective epitaxial growth of silicon have prevented its widespread use as a viable dielectric isolation technology. The main cause of these defects has been demonstrated to be thermal stress due to mismatch in the coefficient of thermal expansion between silicon and silicon dioxide. This article presents the detailed electrical characterization of these s...

The first results of gravimetric measurements of the growth of the oxide layer on single-crystal silicon spheres are presented and compared with a theoretical model and with measurements of the surface layer based on X-ray and ellipsometric methods. From the results, conclusions can be drawn about the quantitative influence of the growth of the oxide layer on the mass stability of silicon spheres.

Aligned, open-tipped carbon nanotube arrays of high density and uniformity were synthesized via a flame method on silicon substrates using a nanoporous template of anodized aluminum oxide from which the nanotubes were grown. The diameter and length of the nanotubes are controlled by the geometry of the aluminum oxide template. These results show the feasibility of integration between carbon nan...

/Description The PS-rich and neutral PS-b-PMMA block copolymer (BCP) films were spin coated on the neutral random copolymer hydroxyl-terminated PS-r-PMMA layers grafted on the native oxide and 50 nm thick PECVD amorphous silicon oxide layers. Relationship between the grafting density of BCP and surface density of hydroxyl moiety on silicon oxide is discussed. Furthermore, optimization of anneal...

Silicon nanoparticles of three types (oxide-terminated silicon nanospheres, micron-sized hydrogen-terminated porous silicon grains and micron-size oxide-terminated porous silicon grains) were incorporated into silica aerogels at the gel preparation stage. Samples with a wide range of concentrations were prepared, resulting in aerogels that were translucent (but weakly coloured) through to compl...

We propose a complete model for the oxidation of silicon-germanium. Our model is capable of predicting, as a function of time, the oxide thickness, the profile of the silicon in the underlying alloy, and the profile of germanium in the oxide. The parameters of the model vary with temperature, alloy composition and oxidizing ambient. The model shows excellent agreement with published results, wi...