In the present study, friction and wear behaviors of Si3N4-hBN(Hexagonal boron nitride) ceramic composites against polyether-etherketone in artificial seawater were investigated, sliding speed was varied from 0.52 to 1.73 m/s study effect. It found that coefficients rates decreased with increase for Si3N4-hBN (with hBN content ranging 5% 20%) PEEK(Polyether-ether-ketone); pairs represented an u...

Dealing with high-temperature properties and brittleness is always one of the hot topics in field ceramic materials. Extensive research has been carried out for it Si3N4-SiC composites are most promising composites. In this study, impact Si3N4 BN reinforcement on microstructure physio-mechanical SiC-based were explored. Two sets composites, including BN-Si3N4-SiC aided Al2O3, fabricated using n...

Si2N2O is considered as a new great potential structural/functional candidate in place of Si3N4. The amorphous Si3N4 nanopowder was incorporated into silica sol by adding of MgO and Y2O3 as sintering aid. Synthesized powders were heated by spark plasma sintering at a heating rate of 100 oC/min yielded fully dense compacts at 1550 and 1750 oC for 40 min. The phase formation of samples was charac...

The microstructure and phase composition of the high-content Al2O3-Y2O3-doped spark plasma-sintered silicon nitride were investigated. Fully dense silicon nitride ceramics with a typical α-Si3N4 equiaxed structure with average grain size from 200 to 530 nm, high elastic modulus of 288 GPa, and high hardness of 2038 HV were spark plasma sintered (SPSed) at 1550 °C. Silicon nitride with elongated...

We explore the use of Si3N4/Si substrates as a substitute of the standard SiO2/Si substrates employed nowadays to fabricate nanodevices based on 2D materials. We systematically study the visibility of several 2D semiconducting materials that are attracting a great deal of interest in nanoelectronics and optoelectronics: MoS2, MoSe2, WSe2 and black-phosphorus. We find that the use of Si3N4/Si su...

Parallel molecular dynamics simulations are performed to determine atomic-level stresses in Si(111)/Si(3)N4(0001) and Si(111)/a-Si3N4 nanopixels. Compared to the crystalline case, the stresses in amorphous Si3N4 are highly inhomogeneous in the plane of the interface. In silicon below the interface, for a 25 nm square mesa stress domains with triangular symmetry are observed, whereas for a recta...

Nanofabricated photonic materials offer opportunities for crafting the propagation and dispersion of light in matter. We demonstrate an experimental realization of a two-dimensional negative-index material in the blue-green region of the visible spectrum, substantiated by direct geometric visualization of negative refraction. Negative indices were achieved with the use of an ultrathin Au-Si3N4-...

We observe strong modal coupling between the TE00 and TM00 modes in Si3N4 ring resonators revealed by avoided crossings of the corresponding resonances. Such couplings result in significant shifts of the resonance frequencies over a wide range around the crossing points. This leads to an effective dispersion that is one order of magnitude larger than the intrinsic dispersion and creates broad w...

Amorphous silicon oxide (a-SiO2) and nitride (a-Si3N4) are two key dielectrics in microelectronic silicon devices [1]. The dominant dielectric used currently in silicon devices is a-SiO2 [1,2]. Application of silicon oxide for future devices will be impeded by several fundamental limitations which lead to low reliability of semiconductor devices and to the necessity of alternative dielectrics [...

The water content of phosphoric acid in etching silicon nitride and silicon dioxide plays an important role. An increase in water content increases the etch rate of silicon nitride and decreases the etch rate of silicon dioxide. The highest possible temperature for a fixed water content at atmospheric pressure in the system H2O-P2O5 is realized by boiling the liquid and refluxing the vapor phas...