λ2 OC-192 We are manufacturing widely tunable laser diodes based on an integrated single chip design. The sampled-grating distributed Bragg reflector (SG-DBR) laser is monolithically integrated with a semiconductor optical amplifier (SOA). The continuous wave (cw) output power of the fully packaged device is more than 20mW over the entire C-band with low noise figures and a high side-mode suppr...

In this article, different amplifiers such as erbium doped fiber amplifier, Raman amplifier and semiconductor optical amplifier, have been investigated in inter-satellite links on optical wireless communication system. It has been observed that EDFA performs better at long range than Raman and SOA amplification while later mentioned amplifiers perform well in the context of less distances. Q-Fa...

We report on all-optical 1310 to 1550 nm wavelength conversion and NRZ-to-RZ data format conversion based on nonlinear polarization rotation in a single semiconductor optical amplifier. Introduction Undoubtedly, the 1310 nm transmission window is experiencing renewed interest. Multi-Gbit/s 1310 nm transmission technology is employed in access and metro networks [1-2]. The long-haul core network...

An all-optical flip-flop, the memory of which is based on dispersive bistability in a single vertical cavity semiconductor optical amplifier, is demonstrated experimentally. Flip-flop control is achieved using two mechanisms: cross-phase modulation to set the flip-flop and cross-gain modulation of the holding beam within a remote SOA to reset it. Optical control signals are sub-milliwatt in pow...

In this paper, we have experimentally investigated the optimized bias current of semiconductor optical amplifiers (SOAs) to achieve high-speed input pulse train amplification with high gain and low distortion. Variations of the amplified output pulse duration with the amplifier bias currents have been analyzed and, compared to the input pulse duration, the amplified output pulse duration is bro...

We propose and experimentally demonstrate a triple-wavelength fiber ring laser using a semiconductor optical amplifier (SOA) in conjunction with an array waveguide grating (AWG). The experimental results show three lasing lines with an adjustable wavelength separation and a large optical signal-to-noise ratio under room temperature. The three channels operate at 1531.5 nm, 1532.3 nm and 1533.1 ...

This paper investigates the effect of input optical pulse energy on the total gain of the semiconductor optical amplifier (SOA) injected with a non-uniform bias current. For ultra-high data rate applications it is essential that the SOA has a fast gain recovery response, thus resulting in maximum SOA gain and reduced gain standard deviation. SOA with higher gain standard deviation will reduce t...

Here, we present a study of the effective piezoelectric constant (e14e) temperature dependence in strained [111]-oriented zinc-blende quantum wells (QWs) embedded within semiconductor optical amplifier (SOA). We determined e14e using method that was insensitive to segregation phenomenon and bandgap energy, which required neither fitting parameters nor temperature-dependent expressions for energ...

We demonstrate a generation of three lasing wavelengths with the assistance Rayleigh backscattering as stabilizer peak power variations. The proposed laser consists combination semiconductor optical amplifier (SOA) and erbium-doped fiber (EDFA) amplifying media. Three Bragg gratings are employed selective wavelength selectors at 1544, 15747 1550 nm. At 110 mA SOA current 18 dBm EDFA output powe...