We investigated spin-dependent transport properties from a viewpoint of spin detection and injection using a ferromagnetic metal / insulator (Al2O3)/ semiconductor tunnel junction with homogeneous and flat interfaces. For spin detection from the semiconductor, spin-polarized electrons were excited in the GaAs layer by circularly polarized light and injected into the permalloy layer. The energy ...

We utilized a thermal radiation method to synthesize semiconducting hollow ZnO nanoballoons and metal-semiconductor concentric solid Zn/ZnO nanospheres from metallic solid Zn nanospheres. The chemical properties, crystalline structures, and photoluminescence mechanisms for the metallic solid Zn nanospheres, semiconducting hollow ZnO nanoballoons, and metal-semiconductor concentric solid Zn/ZnO ...

Semiconductor nanowires (NWs) have been researched as the building blocks for various nanosensors and devices, such as strain sensors, [ 1,2 ] photodetectors, [ 3 ] biosensors, [ 4 ] and gas sensors. [ 5 ] In recent years, wurtzite semiconductor NWs, such as ZnO, have been extensively investigated due to their piezoelectric properties. [ 6 ] With metal-semiconductor Schottky junctions, the elec...

 Researchers in the field of simulation have been mainly interested in the question of how to increase the efficiency of solar cells. Therefore this study aimed to investigate CdS/CdTe solar cells by applying AMPS-1D software. The impact of semiconductor layers thickness on the output parameters of the CdS/CdTe solar cell is being analyzed and studied carefully, for example, fill factor, effici...

In view of the newly synthesized two-dimensional (2D) semiconductor material WSi<sub>2</sub>N<sub>4</sub> (WSN) and 2D metal MoSH (MSH), a metal-semiconductor MSH/WSN Schottky-junction is constructed in this work. practical applications contact, presence Schottky barrier degrades device performance severely. Therefore, it crucial to obtain smaller height or even an Ohmic...

Field-Effect-Transistors Metal-semiconductor junction is an efficient structure to control the carrier concentration of channel semiconductors, benefiting regulation mobility. In article number 2102323, Lei Liao, Johnny C. Ho, Zai-xing Yang, and co-workers demonstrate that by simply constructing metal-semiconductor junctions, peak hole mobility GaSb nanowire field-effect-transistor can be enhan...

Contribution: This brief comment highlights some crucial assumptions behind the “law of junction” that are overlooked by above paper and argues proposed derivation is not actually a “new” at all. Background: The one most significant useful results within field solid-state devices. likely to confuse readers, particularly those who undergraduate electrical engineering students studying semiconduc...

This work presents a dual-junction, single-photon avalanche diode (SPAD) with electrical μ-lens designed and simulated in 90 nm standard complementary metal oxide semiconductor (CMOS) technology. The evaluated structure can collect the photons impinging beneath the pixel guard ring, as well as the pixel active area. The fill factor of the SPAD increases from 12.5% to 42% in comparison with simi...

The results of measuring the resistivity thin-film structures Ti|Si@O@Al|Ti and Ti|LiCoO2|Ti by electrochemical impedance spectroscopy (EIS) cyclic voltammetry (CV) are presented. It was found that, according to EIS data, resistance is three orders magnitude higher than CV which due nonohmic nature metal-semiconductor junction varistor effect. shown that Ti-LiCoO2 contact ohmic, while nonlinear...