Thermal diffusivity values of molten germanium and silicon were measured by a laser flash method. Simple but useful sample cell systems were developed to keep the molten germanium and silicon shape uniform for a given thickness. In the present experimental condition, it is necessary to consider the effect of not only the radiative heat loss but also the conductive heat loss at the interface bet...

The 3 862.5 cm−1 vibration of oxygen in crystalline germanium is shown to decay into one 1 local mode of the oxygen center plus two lattice modes. This description predicts increases in the linewidths in O-doped germanium, and decreases in the linewidths in O-doped germanium, as the Ge mass in the Ge-O-Ge complex increases, in agreement with observation. The decay time is expected to vary only ...

Germanium optical fibers have been fabricated using a high pressure chemical deposition technique to deposit the semiconductor material inside a silica capillary. The amorphous germanium core material has a small percentage of hydrogen that saturates the dangling bonds to reduce absorption loss. Optical transmission measurements were performed to determine the linear losses over a broad mid-inf...

Abstract High-quality, ultra-precise processing of surfaces is high importance for high-tech industry and requires a good depth control processing, low roughness the machined surface as little possible subsurface damage but cannot be realized by laser ablation processes. Contrary, electron/ion beam, plasma processes dry etching are utilized in microelectronics, optics photonics. Here, we have d...

A correlation is observed between the diameters (d) of single-walled carbon nanotubes and the percentages of metallic and semiconducting tubes synthesized at 600 degrees C by plasma-assisted chemical vapor deposition. Small tubes (d approximately 1.1 nm) show semiconductor percentages that are much higher than expected for a random chirality distribution. Density functional theory calculations ...

While the electrical conductivity of bulk-scale group 14 materials such as diamond carbon, silicon, and germanium is well understood, there is a gap in knowledge regarding the conductivity of these materials at the nano and molecular scales. Filling this gap is important because integrated circuits have shrunk so far that their active regions, which rely so heavily on silicon and germanium, beg...

Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and energy-resolved probing of ultrafast electron and hole dynamics in a silicon-germanium alloy with th...

X-ray absorption near edge structure (XANES) spectroscopy was used on zoned sphalerites (ZnS) from two world-class Mississippi Valley Type deposits, the Central and Eastern Tennessee Mining district, USA, in order to investigate germanium oxidation states. Due to the low germanium concentrations of these samples, it was necessary to perform the X-ray absorption spectroscopy (XAS) in fluorescenc...

Nanoscale transistors employing an individual semiconducting carbon nanotube as the channel hold great potential for logic circuits with large integration densities that can be manufactured on glass or plastic substrates. Carbon nanotubes are usually produced as a mixture of semiconducting and metallic nanotubes. Since only semiconducting nanotubes yield transistors, the metallic nanotubes are ...