Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective ma...

We demonstrated the effect of superparamagnetic Fe3O4 nanoparticles on Schottky barriers of graphene, in which the Fe3O4 nanoparticles were fabricated by a hydrothermal method and the single-layer graphene sheets were mechanically exfoliated from Kish graphite. The Fe3O4 nanoparticles were superparamagnetic with the saturation magnetic moment of about 32 emu/g at room temperature. We have found...

Electrical Characteristics of Industry’s first commercially available 1200 V rated SiC Schottky rectifiers, specially designed for operation at ≥ 250 °C are presented. These high-temperature SiC rectifiers fabricated in 1, 5, and 20 A current ratings feature reverse leakage currents of < 3 mA/cm at 1200 V up to temperatures as high as 300 °C. GeneSiC’s 1200 V/20A High Temperature Schottky (desi...

Several arguments are given for the summability of the superstring perturbation series. Whereas the Schottky group coordinatization of moduli space may be used to provide refined estimates of large-order bosonic string amplitudes, the super-Schottky group variables define a measure for the supermoduli space integral which leads to upper bounds on superstring scattering amplitudes. The genus-dep...

The construction of analogues of the Cauchy kernel is crucial for the solution of Riemann–Hilbert problems on compact Riemann surfaces. A formula for the Cauchy kernel can be given as an infinite sum over the elements of a Schottky group, and this sum is often used for the explicit evaluation of the kernel. In this paper a new formula for a quasi-automorphic analogue of the Cauchy kernel in ter...

In this paper, fabrication and study of electronic properties of Au/methyl-red/Ag surface type Schottky diode by current-voltage (I-V) method has been reported. The I-V characteristics of the Schottky diode showed the good rectifying behavior. The values of ideality factor n and barrier height b of Au/methyl-red/Ag Schottky diode were calculated from the semi-log I-V characteristics and by usin...

The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of n...

Resonant cavity enhanced (RCE) photodiodes (PD’s) are promising candidates for applications in optical communications and interconnects where high-speed high-efficiency photodetection is desirable. In RCE structures, the electrical properties of the photodetector remain mostly unchanged; however, the presence of the microcavity causes wavelength selectivity accompanied by a drastic increase of ...

We report novel photovoltaic (PV) switching based on the low exciton-binding energy property of an organic heptazole (C26H16N2) thin film after fabrication of an heptazole-based Schottky diode. The Schottky diode cell displayed an instantaneous voltage of 0.3 V as an open circuit voltage (VOC) owing to the work function difference between the Schottky and ohmic electrode under deep blue illumin...

Production of chemical fuels by direct solar energy conversion in a photoelectrochemical cell is of great practical interest for developing a sustainable energy system. Various nanoscale designs such as nanowires, nanotubes, heterostructures and nanocomposites have been explored to increase the energy conversion efficiency of photoelectrochemical water splitting. Here we demonstrate a self-orga...