Defining the notions of Schottky, Landau and Picard properties on a plane domain, the first author [3] proved that a domain in C having any of these properties is equivalent to the hyperbolicity of the domain. In this paper the authors extend these notions to higher-dimensional case and obtain other various equivalent conditions for the hyperbolicity of a complex manifold.

We study a complex 3-dimensional family of classical Schottky groups of genus 2 as monodromy groups of the hypergeometric equation. We find non-trivial loops in the deformation space; these correspond to continuous integer-shifts of the parameters of the equation.

Let S be a closed orientable surface of genus at least two, and let C be an arbitrary (complex) projective structure on S. We show that there is a decomposition of S into pairs of pants and cylinders such that the restriction of C to each component has an injective developing map and a discrete and faithful holonomy representation. This decomposition implies that every projective structure can ...

Surface potential measurement on atomically thin MoS2 flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS2 thin flakes. Schottky diode devices using mono- and multi-layer MoS2 channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type ...

The structures and electronic properties of the phosphorene and graphene heterostructure are investigated by density functional calculations using the hybrid Heyd-Scuseria-Ernzerhof (HSE) functional. The results show that the intrinsic properties of phosphorene and graphene are preserved due to the weak van der Waals contact. But the electronic properties of the Schottky contacts in the phospho...

At present, an important issue is to dispose of electrical models describing the interplay between the observed phenomenology in CNT-FETs. These models are intended to serve as guidelines for the design and projection of CNT-FET performances. In this work we propose a physics-based model for CNT-FETs for computing the transfer and output characteristics. The model captures the observed phenomen...

The efficiencies of open-air processed Cu2O/Zn(1-x)Mg(x)O heterojunction solar cells are doubled by reducing the effect of the Schottky barrier between Zn(1-x)Mg(x)O and the indium tin oxide (ITO) top contact. By depositing Zn(1-x)Mg(x)O with a long band-tail, charge flows through the Zn(1-x)Mg(x)O/ITO Schottky barrier without rectification by hopping between the sub-bandgap states. High curren...

Ti interdiffusion from the Ti/Pt/Au gate into the AlGaAs Schottky barrier layer (SBL) of 0.25-lm GaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs) has been studied using the accelerated life testing technique. Based on measurements and modeling, analytical expressions for quantitative correlation between the positive pinch-off voltage (VP) shift as well as the saturation drain curr...