We report on heterojunction solar cells whose thin intrinsic crystalline absorber layer has been obtained by plasma enhanced chemical vapor deposition at 165°C on highly doped p-type (100) crystalline silicon substrates. We have studied the effect of the epitaxial intrinsic layer thickness in the range from 1 to 2.4 μm. This absorber is responsible for photo-generated current whereas highly dop...

A comparative study of DC, RF and VHF excitation for the plasma enhanced chemical vapor deposition (PECVD) of intrinsic layers of a-Si:H is presented, with special emphasis on the effects of hydrogen dilution. Growth rates at comparable plasma power, for substrate temperatures between 100°C and 300°C and for various H2 dilution ratios are presented, along with optical bandgap, H content, and el...

Polymer-like thin films have been deposited on glass and silicon substrates at temperatures in the range 300–673 K, by a plasma enhanced chemical vapor deposition (PECVD) method using thiophene (C H S) as a precursor. A power with radio 4 4 frequency (13.56 MHz) was applied for the ignition of the plasma, and hydrogen and Ar(argon) were used as the bubbler and the carrier gases, respectively. I...

the suitability of three vapor deposition techniques for pore size modification was evaluated using polycarbonate track etched membranes as model supports. a feature scale model was employed to predict the pore geometry after modification and the resulting pure water flux. physical vapor deposition (pvd) and pulsed plasma-enhanced chemical vapor deposition (pecvd), naturally, form asymmetric na...

In this work, we report on the deposition of microcrystalline silicon (µc-Si:H) films produced from silane (SiH4), hydrogen (H2), and argon (Ar) mixtures using plasma-enhanced chemical vapor (PECVD) technique at 200 °C. Particularly, studied effect RF power crystalline fraction (XC) deposited films, have correlated XC with their optical, electrical, structural characteristics. Different types c...

The first comparative study of DC, RF and VHF excitation for the plasma enhanced chemical vapor deposition (PECVD) of intrinsic layers of hydrogenated amorphous silicon (a-Si:H) is presented. The effects of hydrogen dilution on film stability are emphasized. Growth rates at comparable plasma power are presented for substrate temperatures between 100°C and 300°C and for various H2 dilution ratio...

Characterization was performed on 60 nm +/3 nm films of atomic layer deposition (ALD) hafnium dioxide (HfO2) and aluminum oxide (Al2O3), and plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (Si3N4) as MIM capacitor dielectric for GaAs HBT technology. The capacitance density of MIM capacitor with ALD HfO2 (2.73 fF/m 2 ) and Al2O3 (1.55 fF/m 2 ) is significantly higher than tha...

In silicon heterojunction solar cells, the passivation of the crystalline silicon wafer surfaces and fabrication of emitter and back surface field are all performed by intrinsic and doped amorphous silicon thin layers, usually deposited by plasma-enhanced chemical vapor deposition (PECVD). By using in-situ diagnostics during PECVD, it is found that the passivation quality of such layers directl...

Here we approximate the plasma kinetics responsible for diamondlike carbon DLC depositions that result from pulsed-dc discharges. The DLC films were deposited at room temperature by plasma-enhanced chemical vapor deposition PECVD in a methane CH4 atmosphere at 10 Pa. We compared the plasma characteristics of asymmetric bipolar pulsed-dc discharges at 100 kHz to those produced by a radio frequen...