Colloidal quantum dots, with their tunable luminescence properties, are uniquely suited for use as lumophores in lightemitting devices for display technologies and large-area planar lighting. In contrast to epitaxially grown quantum dots, colloidal quantum dots can be synthesized as highly monodisperse colloids and solution deposited over large areas into densely packed, solid-state multilayers...

The paper presents the wave functions ψ, probability functions ψψ* and the ground states energy of a nanostructure consisting of a Si QD embedded in SiO2 dielectric medium, which is under bias of varying electrostatic field. Abrupt displacement of the peak of ψψ* at a certain field value is elucidated as the QD emission. The field distribution and the characteristics of the nanostructure quantu...

214 Semiconductor lasers are ubiquitous in modern society and play a key role in technologies ranging from CD players to optical telecommunications. Current-generation lasers have high power output and low lasing thresholds, are stable over a wide range of temperatures, and are cheap and easy to produce. Still, there is room for improvement. We are developing a new type of laser based on ultras...

In recent years, quantum dot (QD) heterostructures have attracted a continuously increasing interest from the viewpoints of fundamental physics and promising device applications, in particular in quantum dot lasers and other advanced optoelectronic devices [1]. The main method to fabricate dense ensembles of QDs is their self-organized growth in highly mismatched heteroepitaxial systems such as...

Quantum dots (QDs) are zero-dimensional (0D) nanomaterials with charge confinement in all directions that significantly impact various applications. Metal-free organic quantum have fascinating properties such as size-dependent bandgap tunability, good optical absorption coefficient, tunability of and emission wavelength, low-cost synthesis. Due to the extremely small scale materials, these char...

Abstract We report on the design, growth, fabrication, and performance of InAs/InP quantum dash (QD) multi-wavelength lasers (MWLs) developed by National Research Council (NRC) Canada. The key technical specifications investigated include optical RF beating spectra, relative intensity noise (RIN), phase each individual wavelength channel. Data bandwidth transmission capacity 5.376 Tbit/s 10.8 r...

Abstract Semiconductor mode-locked lasers (MLLs) with extremely high repetition rates are promising optical frequency comb (OFC) sources for their usage as compact, high-efficiency, and low-cost light in high-speed dense wavelength-division multiplexing transmissions. The fully exploited conventional C- L- bands require the research on O-band to fulfil transmission capacity of current photonic ...

Spin-Vertical Cavity Surface Emitting Lasers (spin-VCSELs) are undergoing increasing research effort for new paradigms in high-speed optical communications and photon-enabled computing. To date spin-VCSELs has mostly focused on Quantum-Well (QW) devices. However, novel Quantum-Dot (QD) spin-VCSELs, offer enhanced parameter controls permitting the effective, dynamical ultrafast manipulation of t...

The results of studying the optical properties InGaAs quantum dots are presented. Single-layer with a height 5.3, 3.6 and 2.6 monolayers, as well three-stacked layers tunnel-uncoupled monolayers were formed by molecular-beam epitaxy according to Stransky--Krastanov mechanism on GaAs substrates, using partial capping annealing technique. A decrease in size makes it possible carry out blueshift p...