نتایج جستجو برای: preferred orientation
تعداد نتایج: 165091 فیلتر نتایج به سال:
SiC multilayer coatings were deposited via thermal chemical vapor deposition (CVD) using silicon tetrachloride (SiCl 4 ) and various hydrocarbons under identical growth conditions, i.e. at 1100 °C 10 kPa. The consisted of layers whose preferred orientation alternated between random highly 〈111〉-oriented. randomly oriented prepared with either methane (CH or ethylene (C 2 H as carbon precursor, ...
Epitaxial lateral overgrowth in tandem with the first-principles calculation was employed to investigate the determining factor of a preferred orientation of GaN on SiO2-patterned m-plane sapphire substrates. We found that the (1100)-orientation is favored over the (1103)-orientation in the region with a small filling factor of SiO2, while the latter orientation becomes preferred in the region ...
A method of decomposition of overlapping reflections in a powder pattern with the aid of preferred orientation is presented. Empirical preferred orientation correction with axial symmetry is used. The method is tested on several sets of simulated powder patterns. Introduction Powder patterns collected at various values of some parameter which influences either the position or the intensity of t...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید