Although photomultiplier tubes still dominate in scintillation detectors, silicon photodiodes are becoming increasingly popular. Scintillation light: λ = 200 – 500 nm (E= 6.2 – 2.5 eV) Semiconductor photodiodes offer a) high quantum efficiency (70-90% instead of 30% for PMTs) b) insensitivity to magnetic fields c) small size Introduction to Radiation Detctors and Electronics, 22-Apr-99 Helmuth ...

A novel design is presented for a nanowire/polymer hybrid photodiode. n-InP nanowires are grown directly onto an indium tin oxide (ITO) electrode to increase carrier collection efficiency and to eliminate the need for an expensive substrate. Experiments show that an ohmic contact is achieved between the nanowires and the ITO electrode. The nanowires are then enveloped by a high hole mobility co...

A vacuum photodiode is constructed in the form of a parallel plate capacitor with plate separation d. A battery maintains constant potential V between the plates. A short laser pulse illuminates that cathode at time t = 0 with energy sufficient to liberate all of the surface charge density. This charge moves across the capacitor gap as a sheet until it is collected at the anode at time T . Then...

A resonant-cavity-enhanced photodiode with broad filter transmittance and high quantum efficiency was numerically designed and analyzed, fabricated, and validated experimentally. We show theoretically that the quantum-efficiency spectrum broadens because of anomalous dispersion of the reflection phase of a mirror in the device and describe conditions that allow maximal flatness of the transmitt...

The market of CMOS image sensors is rapidly gaining in importance since optoelectronic devices are present in an increasing number of electronic systems. Therefore, accurate scalable optoelectronic models for photodetectors are necessary to predict their behaviour by circuit simulation. Hardware Description Languages (HDLs) offer and effective and efficient way to describe these systems. In thi...

A new CMOS active pixel with reset noise reduction capability using capacitive feedback reset (CFR) is proposed. The CFR pixel with capacitive feedback consists of a photodiode, four MOS transistors, a feedback capacitor and a buffer capacitor. It can be fabricated in standard CMOS process, thus yielding a low noise pixel without additional process steps. It has been confirmed with a fabricated...