a complete procedure for the design of w-band low noise amplifier in mmic technology is presented. the design is based on a simultaneously power and noise matched technique. for implementing the method, scalable bilateral transistor model parameters should be first extracted. the model is also used for transmission line utilized in the amplifier circuit. in the presented method, input/output ma...

The development of field-effect transistor-based (FET-based) non-volatile optoelectronic memories is vital toward innovations necessary to improve computer systems. In this work, for the first time, unique charge-trapping and charge-retention properties solution-processed colloidal nitrogen-doped carbon quantum dots (CQDs) are harnessed achieve functional programmable by UV illumination with a ...

Abstract We have investigated photon-assisted trapping and detrapping of electrons injected from the gate under negative bias in a heterostructure field-effect transistor (HFET). The electron injection rate was found to be dramatically affected by sub-bandgap laser illumination. trapped reduced two-dimensional gas (2DEG) density at AlGaN/GaN heterointerface but could also emitted their trap sta...

In this paper review study on different types of Junctionless transistor is promoted. Here a comparative study of SOI, bulk planar, double gate and tunnel Junctionless field effect transistor. It is observed Junctionless transistor exhibits better short channel effects and ON current then inversion mode device. Tunnel Junctionless transistor exhibits the properties of both tunnel FET and Juncti...

Based on the stability of deep depletion regime in diamond and outstanding properties this promising material for its use power devices, p-channel metal oxide semiconductor field effect transistors were fabricated a (001) Ib nitrogen-doped high pressure temperature substrate. Taking advantage new concept non-volatile diamond-based photo switch, it is demonstrated that possible to tune normally-...

Single-electron transistors SETs are often discussed as elements. A single-electron transistor consists of a small conducting island coupled to source and.Single-electron transistor SET is a key element in our research field where. Figure 2: Transfer of electrons is a one-by-one in Single Electron Transistor.Nanoelectronics Single-electron transistor Coulomb blockade, Coulomb. Single Electron T...

I discuss general unified formulas for resumming collinear and soft contributions to QCD hard scattering cross sections at large x. Expansions of the resummed cross sections to next-to-next-to-next-to-leading order are also shown along with applications of the formalism. Presented at DPF 2004, Riverside, California, August 26-31, 2004.

An open edge of a simple polygon is the set of points in the relative interior of an edge. We revisit several art gallery problems, previously considered for closed edge guards, using open edge guards. A guard edge of a polygon is an edge that sees every point inside the polygon. We show that every simple non-starshaped polygon admits at most one open guard edge, and give a simple new proof tha...

The 64-channel Multianode Photo Multiplier has been evaluated as a possible choice for the photo detectors of the LHCb Ring Imaging Cherenkov detector. Contributed to the Proceedings of the 30 International Conference on High Energy Physics, 7/27/2000—8/2/2000, Osaka, Japan