نتایج جستجو برای: oxide flux
تعداد نتایج: 261458 فیلتر نتایج به سال:
Functional 1D metal oxides have attracted much attention because of their unique applications in electronic, optoelectronic, and spintronic devices. For semiconducting oxide nanowires (NWs) (e.g., ZnO, In2O3, and SnO2 NWs), field-effect transistors and light-emitting diodes have been demonstrated. Metallic oxide nanoscale materials, such as nanoscale RuO2, can be good candidates as interconnect...
Single crystals of NdBO(2)MoO(4) were obtained from a molybdenum oxide-boron oxide flux under an air atmosphere. The structure features double chains of edge- and face-sharing distorted [NdO(10)] bicapped square-anti-prisms, which are linked by rows of isolated [MoO(4)] tetra-hedra and by zigzag chains of corner-sharing [BO(3)] groups, all of them running along the b axis. The chains of [NdO(10...
The group has developed high quality Cadmium Oxide (CdO) based transparent conductors (TCO) thin films with excellent electrical and optical properties using radio frequency magnetron sputtering method. They demonstrated a significant improvement in the photon flux transmitted through CdO:In compared with commercial Fluorine doped Tin oxide (FTO) for PV technologies relying on the infrared part...
Red transparant platelet-shaped single crystals of tetra-barium gallium trinitride oxide, Ba4GaN3O, were synthesized by the Na flux method. The crystal structure is isotypic with Sr4GaN3O, containing isolated triangular [GaN3](6-) anionic groups. O(2-) atoms are inserted between the slabs of [Ba4GaN3](2+), in which the [GaN3](6-) groups are surrounded by Ba(2+) atoms.
Nitric oxide (NO) regulates numerous processes during endotoxemia and inflammation. However, the sequential changes in whole body (Wb) nitric oxide (NO) production during endotoxemia in vivo remain to be clarified. Male Swiss mice were injected intraperitoneally with saline (control group) or lipopolysaccharide (LPS group). After 0, 2, 4, 6, 9, 12, and 24 h, animals received a primed constant i...
It has been found that in the etching of SiO2 using CHF3 in an inductively coupled plasma reactor of the planarized coil design, a thin steady state fluorocarbon film can play an important role in determining the rate of etching. This etching is encountered as the amount of bias power used in the SiO2 etching process is increased, and a transition from fluorocarbon film growth on the SiO2 to an...
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