The orbital and spin magnetization of a cavity-embedded quantum dot array defined in GaAs heterostructure are calculated within quantum-electrodynamical density-functional theory. To this end, gradient-based exchange-correlation functional recently employed for atomic systems is adapted to the hosting two-dimensional electron gas submitted an external perpendicular homogeneous magnetic field. N...

Quantum dot cellular automata (QCA) introduces a pioneer technology in nano scale computer architectures. Employing this technology is one of the solutions to decrease the size of circuits and reducing power dissipation. In this paper, two new optimized FlipFlops with reset input are proposed in quantum dot cellular automata technology. In addition, comparison with related works is performed.Th...

CdSe quantum dots were in situ deposited on various structures of TiO2 photoanode by successive ionic layer adsorption and reaction (SILAR). Various sensitized TiO2 structures were integrated as a photoanode in order to make quantum dot sensitized solar cells. High power conversion efficiency was obtained; 2.89 % (Voc=524 mV, Jsc=9.78 mA/cm2, FF=0.56) for the cells that sensitized by SILAR meth...

We consider a single electron in a 1D quantum dot with a static slanting Zeeman field. By combining the spin and orbital degrees of freedom of the electron, an effective quantum two-level (qubit) system is defined. This pseudospin can be coherently manipulated by the voltage applied to the gate electrodes, without the need for an external time-dependent magnetic field or spin-orbit coupling. Si...

We report a method of creating electrostatically induced quantum dots by thermal diffusion of interstitial Mn ions out of a p-type (GaMn)As layer into the vicinity of a GaAs quantum well. This approach creates deep, approximately circular, and strongly confined dotlike potential minima in a large (200 microm) mesa diode structure without need for advanced lithography or electrostatic gating. Ma...

Silicon-quantum-dot qubits must contend with low-lying valley excited states that are sensitive functions of the quantum-well heterostructure and disorder; quantifying maximizing energies these critical to improving device performance. We describe a spectroscopic method for probing in isolated $\mathrm{Si}$/$\mathrm{Si}$-$\mathrm{Ge}$ double quantum dots using standard baseband pulsing techniqu...

The electron and nuclear spin degrees of freedom in two-dimensional semiconductor quantum dots are studied as important resources for such fields as spintronics and quantum information. The coupling of electron spins to their orbital motion, via the spinorbit interaction, and to nuclear spins, via the hyperfine interaction, are important for understanding spin-dynamics in quantum dot systems. T...

We investigate ground and excited state transport through small (d≈70  nm) graphene quantum dots. The successive spin filling of orbital states is detected by measuring the difference between ground-state energies as a function of a magnetic field. For a magnetic field in-plane of the quantum dot the Zeeman splitting of spin states is measured. The results are compatible with a g factor of 2, a...