Aerospace applications and energy-saving strategies in general raised the interest and study in the field of lightweight materials, especially on aluminum alloys. Aluminum alloy itself does not have appropriate wear resistance. Therefore, improvement of surface properties is required in practical applications, especially when aluminum is in contact with other parts. In this work, first titanium...

Influence of Aluminum, Gallium, Indium- Doping on the Boron-Nitride Nanotubes (BNNTs) investigated with density functional theory (DFT) and Hartreefock (HF) methods. For this purpose, the chemical shift of difference atomic nucleus was studied using the gauge included atomic orbital (GIAO) approch. In the following, structural parameter values, electrostatic potential, thermodynamic parameters,...

High-frequency, high-power semiconductor devices are widely used in electric vehicles, medical equipment, home appliances, and communication equipment. Recently, there has been a growing demand for semiconductors that have such characteristics as high withstand voltage, high speed and high-temperature operation, low power consumption and radiation resistance. To meet this demand, silicon carbid...

The aluminum-L,,VV Auger spectra for elemental Al. Al oxide and Al nitride have been measured in an assessment of the utility of Auger spectroscopy in characterizing thin oxidized Al films used in model supported-metal catalyst studies. Clearly distinct spectra were found for the three surface chemical states. The oxide spectrum was shown to be similar to published spectra from bulk, single-cry...

The effect of donor-like surface traps on two-dimensional electron gas (2DEG) and drain current collapse of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated in detail. The depletion of 2DEG by the donor-like surface states is shown. The drain current collapse is found to be more sensitive to the addition of positive surface charges. Surface trap states with higher ener...

The goals of this work were to synthesize stoichiometric silicon carbon nitride (Si1.5C1.5N4) films using the RF-PECVD method and to characterize the deposited material. Gas mixtures, as opposed to an organic monomer, were chosen for reactants. Gas mixtures allow for varying the concentration of the elements needed for silicon carbon nitride synthesis and thereby optimizing the composition of t...

With current advances in sub-angstrom resolution scanning transmission electron microscopy (STEM), it is now possible to image directly local crystal structures of materials where dramatically different atoms are separated from each other at distances about or less than 1 angstrom. We achieved direct imaging of atomic columns of nitrogen in close proximity to columns of aluminum in wurtzite alu...

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500°C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-...