We demonstrate that a bipolar non-volatile resistive switching behaviour with negative differential resistance (NDR) effect is realized in a Cu/BaTiO3/Ag device, which was deposited on a Si substrate via magnetron sputtering equipment. We suggest that the bipolar resistive switching is dominated by the trapping/detrapping of electrons at the BaTiO3-Cu interface. In addition, we demonstrate that...

Introduction: Negative resistance elements are important components in oscillator circuits and form the basis of many other nonlinear circuits. Resonant tunnelling diodes (RTDs) have attracted much attention owing to their wide-bandwidth negative differential resistance (NDR), up to hundreds of GHz [1]. Because RTDs can be easily integrated in electronic and optoelectronic circuits, the applica...

Both experiments and theoretical studies have demonstrated that the interaction between the current-carrying electrons and the induced polarization charge in single-molecule junctions leads to a strong renormalization of molecular charging energies. However, the effect on electronic excitations and molecular symmetries remain unclear. Using a theoretical framework developed for semiconductor-na...

Quantum electronic devices with negative differential resistance (NDR) characteristics have been used to design compact multiplexers. These multiplexers may be used either as analog multiplexers where the signal on a single select line selects one out of four analog inputs, or as four-valued logic multiplexers where the select line and the input lines represent one of four quantized signal valu...

We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD). Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resis...

We report a simple memory device in which the fullerene-derivative [6,6]-phenyl-C(61) butyric acid methyl ester (PCBM) mixed with inert polystyrene (PS) matrix is sandwiched between two aluminum (Al) electrodes. Transmission electron microscopy (TEM) images of PCBM:PS films showed well controlled morphology without forming any aggregates at low weight percentages (<10 wt%) of PCBM in PS. Energy...

Void-free Cu electrodeposition in high aspect ratio features requires, at a minimum, an additive package containing micromolar halide and polyether that combine to form co-adsorbed adlayer inhibits metal deposition on the electrode interface. Successful feature filling relies preferential growth proceeding from most recessed surfaces where sustained breakdown of polyether-halide suppressor laye...

In the interpretation of scanning tunneling spectroscopy (STS) data on molecular nanostructures the tunneling conductance is often assumed to be proportional to the local density of states of the molecule. This precludes the possibility of observing negative diierential resistance (NDR). We report here the observation of NDR in the current-voltage (I-V) characteristics of a self-assembled monol...

We report a systematical study of the temperature-dependence of negative deferential resistance (NDR) from double-barrier Al0.35Ga0.65N/GaN resonant tunneling diodes grown by plasma-assisted molecular-beam epitaxy on free-standing GaN substrates. The current–voltage (I–V) characterization was done in the 6–300 K temperature range. A clear NDR signature was observed for mesa sizes of 4 × 4 μm2 a...

Active memristor elements, also called neuristors, are self-oscillating devices that very good approximations to biological neuronal functionality and crucial the development of low-power neuromorphic hardware. Materials showing conduction mechanisms depend superlinearly on temperature can lead negative differential resistance (NDR) regimes, which may further be engineered as self-oscillators. ...