نتایج جستجو برای: nbv dopant

تعداد نتایج: 4550  

1999
Asen Asenov

A three-dimensional (3-D) “atomistic” simulation study of random dopant induced threshold voltage lowering and fluctuations in sub-0.1 m MOSFET’s is presented. For the first time a systematic analysis of random dopant effects down to an individual dopant level was carried out in 3-D on a scale sufficient to provide quantitative statistical predictions. Efficient algorithms based on a single mul...

2009
Michael Trummer Christoph Munkelt Joachim Denzler

Guided Kanade-Lucas-Tomasi (GKLT) tracking is a suitable way to incorporate knowledge about camera parameters into the standard KLT tracking approach for feature tracking in rigid scenes. By this means, feature tracking can benefit from additional knowledge about camera parameters as given by a controlled environment within a next-best-view (NBV) planning approach for three-dimensional (3D) rec...

2017
Yin-Zhe An Young-Ku Heo Jung-Seok Lee Ui-Won Jung Seong-Ho Choi

In this study, the bone regeneration efficacy of dehydrothermally (DHT) cross-linked collagen membrane with or without a bone graft (BG) material was evaluated in a critical-sized rat model. An 8-mm-diameter defect was created in the calvaria of 40 rats, which were randomized into four groups: (1) control; (2) DHT; (3) BG; and, (4) DHT + BG. Evaluations were made at 2 and 8 weeks after surgery ...

2012
Moon Seop Hyun Jung Ho Yoo Noh-Yeal Kwak Won Kim Choong Kyun Rhee Jun-Mo Yang

As the size of metal-oxide-semiconductor field-effect transistors (MOSFETs) shrinks to nanoscale, the precise and reliable dopant profiling in shallow junctions has become important for device modeling and operation (Bertrand et al.,2004). Secondary ion mass spectrometry (SIMS) and spreading resistance profiling are widely used as practical characterization techniques to reveal one-dimensional ...

Journal: :Nature nanotechnology 2009
Daniel E Perea Eric R Hemesath Edwin J Schwalbach Jessica L Lensch-Falk Peter W Voorhees Lincoln J Lauhon

Semiconductor nanowires show promise for many device applications, but controlled doping with electronic and magnetic impurities remains an important challenge. Limitations on dopant incorporation have been identified in nanocrystals, raising concerns about the prospects for doping nanostructures. Progress has been hindered by the lack of a method to quantify the dopant distribution in single n...

2013
Megan L. Hoarfrost Kuniharu Takei Victor Ho Andrew Heitsch Peter Trefonas Ali Javey Rachel A. Segalman

We introduce a new class of spin-on dopants composed of organic, dopant-containing polymers. These new dopants offer a hybrid between conventional inorganic spin-on dopants and a recently developed organic monolayer doping technique that affords unprecedented control and uniformity of doping profiles. We demonstrate the ability of polymer film doping to achieve both p-type and n-type silicon by...

2013
Jianjun Tian Huiping Gao Hui Kong Pingxiong Yang Weifeng Zhang Junhao Chu

Transition metal (TM)-doped TiO2 films (TM = Co, Ni, and Fe) were deposited on Si(100) substrates by a sol-gel method. With the same dopant content, Co dopants catalyze the anatase-to-rutile transformation (ART) more obviously than Ni and Fe doping. This is attributed to the different strain energy induced by the different dopants. The optical properties of TM-doped TiO2 films were studied with...

2010
SEVAL AKSOY YASEMIN CAGLAR SALIHA ILICAN MUJDAT CAGLAR

The undoped and tin (Sn) doped ZnO films were deposited by a spray pyrolysis method onto the glass substrates. 0.2 M solution of zinc acetate in a mixture of ethanol and deionised water, in a volume proportion of 3 :1, was employed. Dopant source was tin chloride. The atomic percentage of dopant in solution were Sn/Zn = 1%, 3% and 5%. The effect of tin doping on the optical and electrical prope...

Journal: :Optics express 2014
Kyoo Sung Shim Jeong Uk Heo Soo In Jo You-Jin Lee Hak-Rin Kim Jae-Hoon Kim Chang-Jae Yu

We report a pitch invariance in cholesteric liquid crystals (CLCs) independent of temperature by mixing two chiral dopants. One dopant tends to shorten the helical pitch of the CLC, but the other makes the pitch longer, with increasing temperatures. From an analysis of temperature dependencies of the pitch for each dopant, we determined the mixing ratio of two chiral dopants for the pitch invar...

2011
A. Cuevas

Deliberate dopant compensation has proven to be an effective way to control ingot resistivity, although the impact of compensation on carrier recombination and mobilities remains under investigation. This paper summarizes recent findings regarding the carrier transport properties of compensated silicon. The capacity of common mobility models to describe compensated silicon is reviewed and compa...

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