Carbon nanotubes (CNTs) and carbon nanotube field effect transistors (CNFETs) have demonstrated extraordinary properties and are widely expected to be the building blocks of next generation VLSI circuits. This chapter presents (1) the first purely CNT and CNFET based nanoarchitecture, (2) an adaptive configuration methodology for nanoelectronic design based on the CNT nano-architecture, and (3)...

Silicon transistors have undergone rapid miniaturization in the past several decades. Recently reported CMOS devices have dimensional scales approaching the “nano-transistor” regime. This paper discusses performance characteristics of a MOSFET device with 15 nm physical gate length. In addition, aspects of a non-planar CMOS technology that bridges the gap between traditional CMOS and the nano-t...

An analytically compact model for the nano-scale double gate MOSFET based on McKelvey’s flux theory is developed. The model is continuous above and below threshold and from the linear to saturation regions. Most importantly, it describes nano-scale MOSFETs from the diffusive to ballistic regimes. In addition to its use in exploring the limits and circuit applications of double gate MOSFETs, the...

We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubren...

A well-defined test structure of organic static-induction transistor (SIT) having regularly sized nano-apertures in the gate electrode has been fabricated by colloidal lithography using 130-nm-diameter polystyrene spheres as shadow masks during vacuum deposition. Transistor characteristics of individual nano-apertures, namely ‘nano-SIT,’ have been measured using a conductive atomic-force-micros...

Organic transistors and circuits are fabricated directly on the surface of banknotes. The transistors operate with voltages of 3 V and have a field-effect mobility of about 0.2 cm2 V−1s−1. For an array of 100 transistors a yield of 92% is obtained.

   This paper presents a novel design of quaternary logic gates using graphene nanoribbon field effect transistors (GNRFETs). GNRFETs are the alternative devices for digital circuit design due to their superior carrier-transport properties and potential for large-scale processing. In addition, Multiple-valued logic (MVL) is a promising alternative to the conventional binary logic design. Sa...

Organic thin-film transistors for high frequency applications require large transconductances in combination with minimal parasitic capacitances. Techniques aiming at eliminating parasitic capacitances are prone to produce a mismatch between electrodes, in particular gaps between the gate and the interlayer electrodes. While such mismatches are typically undesirable, we demonstrate that, in fac...

We analyze the effect of carrier confinement on the charge-transport properties of organic field-effect transistors. Confinement is achieved experimentally by the use of semiconductors of which the active layer is only one molecule thick. The two-dimensional confinement of charge carriers provides access to a previously unexplored charge-transport regime and is reflected by a reduced temperatur...