Transistor size is decreasing day by day, therefore it is difficult to overcome the problem of short channel effects. For preventing short channel effects, source/drain engineering, substrate engineering & gate engineering have been introduced. According to chronological growth of VLSI Design, there is need of non-conventional structure of MOSFET and researchers are getting shifted in search of...

Direct experimental measurement techniques have had limited success in the determination of the two-dimensional (2D) doping profile of a MOSFET. In this paper, we describe an alternative methodology that uses source/drain (S/D) diode and gate overlap capacitance measurements to determine the 2D profile by inverse modeling [l]. Our approach is based on the optimized tensor product spline (TPS) r...

In this paper, we present a simple and accurate MOSFET channel charge model for device modeling in circuit simulation. The model can guarantee good continuities and smooth transitions of charge, capacitance, current, and transconductance from subthreshold to strong inversion with a unified analytical expression, and agrees with the experimental data well at various process and bias conditions f...

In order to acquire radiation-tolerant characteristics in integrated circuits, a dummy gate-assisted n-type metal oxide semiconductor field effect transistor (DGA n-MOSFET) layout was adopted. The DGA n-MOSFET has a different channel shape compared with the standard n-MOSFET. The standard n-MOSFET has a rectangular channel shape, whereas the DGA n-MOSFET has an extended rectangular shape at the...

Important features of a deep-submicron MOSFET drain current model capable of supporting both digital and analog circuit simulations are described. Formulation of the commonly used mobility and velocity saturation models have to be revised to account for the influnce of the higher clecttic field in deep-submicron devices. For analog circuit simulations, output resistance modeling and smooth tran...

A new small-signal model for fully depleted silicon-oninsulator (FD-SOI) MOSFETs operating at RF frequencies is presented. The model accounts for the non-quasi-static effect by determining model parameters using a curve fitting procedure to reproduce the frequency response of FD-SOI MOSFETs. The accuracy of the model is validated by comparison of S parameters with measured results in the range ...

In this paper, we will introduce a new algorithm for calculating the Green’s function of Schrödinger equation in a block layered potential, which has various and practical application in the quantum modeling of electron transport in a nano-MOSFET transistor. The proposed method is based on expansion of eigenfunctions of some Sturm-Liouville problems and collocation matching procedure. Numerical...

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Carrier dynamics in a MOSFET channel under fast time-varying gate input is included in the modeling for circuit simulation and implemented in SPICE3f5 at only 7% increased computational runtime cost. Correct reproduction of transient drain currents as well as harmonic-distortion characteristics are verified. While the carrier dynamics under low-frequency operation is mostly governed by the carr...