نتایج جستجو برای: mos2 particles
تعداد نتایج: 161050 فیلتر نتایج به سال:
Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical...
Nanostructured MoS2 is very promising as an electrocatalyst for hydrogen evolution due to a greater number of active edge sites. However, a very large resistance between basal planes decreases the overall efficiency of hydrogen evolution, and greatly limits its application in industry. Herein we develop a facile strategy to synergistically increase the number of active edge sites and the conduc...
Controlling the threshold voltage (Vth) of a field-effect transistor is important for realizing robust logic circuits. Here, we report a facile approach to achieve bidirectional Vth tuning of molybdenum disulfide (MoS2) field-effect transistors. By increasing and decreasing the amount of sulfur vacancies in the MoS2 surface, the Vth of MoS2 transistors can be left- and right-shifted, respective...
Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large bandgap of MoS2 minimize direct source-drain tunneling, while its atomically thin body maximizes the gate modulation efficiency in ultrashort-channel transistors. However, no experimental study to date has approached...
MoS2, as a typical transition metal dichalcogenide, has attracted great interest because of its distinctive electronic, optical, and catalytic properties. However, its advantages of strong light absorption and fast intralayer mobility cannot be well developed in the usual reported monolayer/few-layer structures, which make the performances of MoS2-based devices undesirable. Here, large-area, hi...
امروزه خواص اپتیکی منحصر به فرد تک لایه mos2 به عنوان نیمه هادی دو-بعدی مورد توجه قرار گرفته است. در این مقاله از ضرایب فرنل برای تعیین خواص اپتیکی مانند جذب، بازتاب و عبور لایه mos2 در بازه ی تراهرتز استفاده شده است. ساختار کلی شامل دو محیط نیمه بی نهایت sio2 و هوا است که تک لایه mos2 در بین آنها قرار دارد. ما دریافتیم که بیشینه جذب برابر با مقدار اندک 6-10×5/2 است که در بازتاب داخلی، برای قطب...
Typical layered transition-metal chalcogenide materials, in particular layered molybdenum disulfide (MoS2) nanocomposites, have attracted increasing attention in recent years due to their excellent chemical and physical properties in various research fieldsHere, a general overview of synthetic MoS2 based nanocomposites via different preparation approaches and their applications in energy storag...
Despite the unique properties of black phosphorus (BP) and phosphorene, including high carrier mobility and in-plane anisotropy, their stability has been hampered by significant crystal deterioration upon exposure to oxygen and water. Herein, we investigate the chemical stability of MoS2-passivated black phosphorus (BP) or bilayer (2L) phosphorene van der Waals (vdW) heterostructures using the ...
Hydrogen generation from water using noble metal-free photocatalysts presents a promising platform for renewable and sustainable energy. Copper-based chalcogenides of earth-abundant elements, especially Cu2ZnSnS4 (CZTS), have recently arisen as a low-cost and environment-friendly material for photovoltaics and photocatalysis. Herein, we report a new heterostructure consisting of CZTS nanopartic...
Recently, two-dimensional materials such as molybdenum disulfide (MoS2) have been extensively studied as channel materials for field effect transistors (FETs) because MoS2 has outstanding electrical properties such as a low subthreshold swing value, a high on/off ratio, and good carrier mobility. In this study, we characterized the electrical and photo-responsive properties of MoS2 FET when sta...
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