نتایج جستجو برای: microwave oscillator

تعداد نتایج: 81306  

Journal: :The Review of scientific instruments 2011
A Agnesi C Braggio G Carugno F Della Valle G Galeazzi G Messineo F Pirzio G Reali G Ruoso

We describe recent improvements in the development of the high power laser system used in the motion induced radiation (MIR) experiment to amplify electromagnetic fields inside a microwave cavity. The improvements made on the oscillator stabilization, the pulse train shaping device, and the spatial beam uniformity are reported.

2007
Shan Qiao Tao Jiang Lixin Ran Kangsheng Chen

In this paper, we present a new scheme for the realization of a wide-band noisesignal RADAR utilizing wide-band chaotic signal generated from microwave chaotic Colpitts oscillator. System simulations show that such RADAR can still work in an environment when the signal-to-noise ratio (SNR) is −20 dB.

2013
S. Gribaldo R. Boudot G. Cibiel V. Giordano O. Llopis Edouard Belin

The nonlinear modelling of different microwave SiGe bipolar transistors has been performed. Using these models, the phase noise of an amplifier is computed, taking into account two different types of noise, the microwave additive noise floor and the up-converted 1/f noise. The simulation technique combines different approaches available in a commercial CAD software. Theoretical results are then...

Journal: :Physical review letters 2008
J D Teufel J W Harlow C A Regal K W Lehnert

We measure the response and thermal motion of a high-Q nanomechanical oscillator coupled to a superconducting microwave cavity in the resolved-sideband regime where the oscillator's resonance frequency exceeds the cavity's linewidth. The coupling between the microwave field and mechanical motion is strong enough for radiation pressure to overwhelm the intrinsic mechanical damping. This radiatio...

2012
Kevin Huang

and Introduction: This project focused on the preparation of high electron mobility transistors (HEMTs) and the design of a HEMTbased, single-lithography-layer oscillator with active integrated antenna circuit with target oscillation frequencies up to 100 GHz. HEMT devices are well known for their suitability in high frequency microwave circuits, possibly for two reasons. Firstly, HEMTs offer h...

Journal: :Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics 1996
Cohen Eichenbaum Kleinman Chairman Gover

The effects of electron-beam prebunching on the radiation buildup process in a free-electron maser oscillator operating in the frequency range of 4–5 GHz were studied. An electron beam of 10 keV, 1 A was prebunched by means of a microwave tube section, accelerated to 70 keV, transported through a drift region by a solenoidal magnetic field and injected into a linearly polarized wiggler in which...

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