We report on the fabrication of channel waveguides in epitaxial grown BaTiO3 layers on MgO. Layers were prepared by metalorganic chemical vapor deposition. Ridge waveguides with ridge heights ranging from 15 to 200 nm were fabricated in a 0.2-mm-thick film. Single mode waveguide throughput, scattering loss, and mode profiles are reported. Coating waveguides with spin on glass significantly incr...

A novel low-temperature method based on a combination of pulsed laser deposition and metalorganic chemical vapour deposition was used to fabricate GaN thin films doped with rare-earth (RE) ions. The films were deposited on GaN/Al2O3 substrates. The x-ray diffraction analysis of these GaN : RE (RE = Eu, Tb) samples showed that the films have the hexagonal phase of GaN and are polycrystalline wit...

We investigate p-type GaN : Mg materials using noise spectroscopy. The epitaxial Mg-doped GaN layers were grown on a sapphire substrate by metalorganic chemical vapour deposition. Significant generation–recombination noise is observed and shown to be linked to metastable DX-like centres. We correlate these centres with metastable defects with optical ionization energies 1.1 eV and 1.9 eV, respe...

An InGaAsN single-layer quantum dot ~QD! laser structure was grown on GaAs substrates by metalorganic chemical vapor deposition ~MOCVD!. The ridge-waveguide edge emitting laser diodes ~LD! were fabricated and characterized. We demonstrate room-temperature operation of InGaAsN QD lasers with an emission wavelength of 1078 nm. Electroluminescence spectra as a function of injection current showed ...

Schottky structures based on Mg-doped GaN layers grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrate are studied by thermal admittance spectroscopy from 90 K to room temperature. Evidence of two impurity levels results from the analysis of the observed peaks in the conductance curves, whose positions and strengths are temperature dependent. The experimental results are...