نتایج جستجو برای: metal mobility

تعداد نتایج: 289221  

2002

LLE Review, Volume 91 125 Introduction The transition metal–hydrogen systems have been intensively researched for many years because of the various applications of these systems. A large hydrogen solubility in some transition metals allows their use for safe and high-capacity hydrogen storage.1,2 At the other end of the spectrum, hydrogen ingress at low concentrations can induce mechanical degr...

Journal: :Analytical sciences : the international journal of the Japan Society for Analytical Chemistry 2002
Toshio Takayanagi Shoji Motomizu

The resolutions of metal-4-(2-pyridylazo)resorcinol chelates by capillary zone electrophoresis (CZE) were investigated in the presence of some interacting reagents; also, equilibrium reactions between the chelates and the interacting reagents were analyzed in an aqueous solution. Among nine metal chelates formed in aqueous solution, the chelates of VV, FeII, CoIII, NiII, and CuII were resolved ...

Journal: :Chemosphere 2008
Andrew R Zimmerman Dong-Hee Kang Mi-Youn Ahn Seunghun Hyun M Katherine Banks

Cyanide is commonly found as ferrocyanide [Fe(II)(CN)(6)](-4) and in the more mobile form, ferricyanide [Fe(III)(CN)(6)](-3) in contaminated soils and sediments. Although soil minerals may influence ferrocyanide speciation, and thus mobility, the possible influence of soil enzymes has not been examined. In a series of experiments conducted under a range of soil-like conditions, laccase, a pheno...

Journal: :Nanoscale 2014
Youngbin Lee Jinhwan Lee Hunyoung Bark Il-Kwon Oh Gyeong Hee Ryu Zonghoon Lee Hyungjun Kim Jeong Ho Cho Jong-Hyun Ahn Changgu Lee

We describe a method for synthesizing large-area and uniform molybdenum disulfide films, with control over the layer number, on insulating substrates using a gas phase sulfuric precursor (H2S) and a molybdenum metal source. The metal layer thickness was varied to effectively control the number of layers (2 to 12) present in the synthesized film. The films were grown on wafer-scale Si/SiO2 or qu...

2016
Xin Li Yan Wang Di Wu Lei Liu Gerbrand Ceder

Na energy storage technology is strategically attractive for large scale applications such as grid energy storage. We show in this paper that there is a clear relation between the Jahn−Teller activity of a transition metal ion at the end of charge and the mobility of Na in a cathode material. This is particularly important as mobility at the end of charge limits the capacity of current material...

2013
Yoshihito Honsho Tomoyo Miyakai Tsuneaki Sakurai Akinori Saeki Shu Seki

We have successfully designed the geometry of the microwave cavity and the thin metal electrode, achieving resonance of the microwave cavity with the metal-insulator-semiconductor (MIS) device structure. This very simple MIS device operates in the cavity, where charge carriers are injected quantitatively by an applied bias at the insulator-semiconductor interface. The local motion of the charge...

2013
Jin-Suk Seo Jun-Hyuck Jeon Young Hwan Hwang Hyungjin Park Minki Ryu Sang-Hee Ko Park Byeong-Soo Bae

Transparent flexible fluorine-doped indium zinc oxide (IZO:F) thin-film transistors (TFTs) were demonstrated using the spin-coating method of the metal fluoride precursor aqueous solution with annealing at 200°C for 2 hrs on polyethylene naphthalate films. The proposed thermal evolution mechanism of metal fluoride aqueous precursor solution examined by thermogravimetric analysis and Raman spect...

2016
Tony Yamin Yakov M. Strelniker Amos Sharoni

Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of microscopic understanding of mechanisms involved in these transitions. A prototypical example is VO2, where previous studies indicated that the MIT resistance change ...

2016
Paritosh Karnatak T. Phanindra Sai Srijit Goswami Subhamoy Ghatak Sanjeev Kaushal Arindam Ghosh

The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field-effect transistors of varying device geometry and conta...

Journal: :Nano letters 2013
Wei Liu Jiahao Kang Deblina Sarkar Yasin Khatami Debdeep Jena Kaustav Banerjee

This work presents a systematic study toward the design and first demonstration of high-performance n-type monolayer tungsten diselenide (WSe2) field effect transistors (FET) by selecting the contact metal based on understanding the physics of contact between metal and monolayer WSe2. Device measurements supported by ab initio density functional theory (DFT) calculations indicate that the d-orb...

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