We derive the low energy effective action of lightly doped two-leg t-J ladders with the help of slave fermion technique. Because of the underlying spin liquid state, we can assume the existence of a short-ranged antiferromagnetic order for some range of parameters in the lightly doped case. This leads to the usual t ′ − J model. The continum limit of this model consists of two kinds of Dirac fe...

This work reports record-high three-terminal on-state drain-source breakdown voltage (BVDS) of -735 V in p-channel GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with a drain field-plate (DFP). High-k and wide-gap Al2O3 was deposited as the gate oxide surface passivation by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. Good source/d...

We introduce linear decision diagrams (LDDs) as a special class of linear representations of formal power series. LDDs can be seen as a generalization of some previously proposed structures, such as MTBDDs and matrix diagrams, that have seen successful application in the compact representation of Markov models with large state spaces. Besides providing some possibilities for additional compress...

The electrical resistivity, Hall coefficient, and thermopower as functions of temperature are reported for lightly electron-doped Ca1−xLaxMnO3 0 x 0.10 . Unlike the case of hole-doped ferromagnetic manganites, the magnitude and temperature dependence of the Hall mobility H for these compounds is found to be inconsistent with small-polaron theory. The transport data are better described by the F...

New trial wave functions, constructed explicitly from the unique Mott insulating state with antiferromagnetic order, are proposed to describe the ground state of a Mott insulator slightly doped with holes or electrons. A rigid band is observed as charged quasiparticles with well-defined momenta being realized in these states. These states have much less superconducting correlations than previou...