In this work, a novel Silicon on Insulator (SOI) MOSFET is proposed and investigated. The drain and source electrode structures are optimized to enhance ON-current while global device temperature and hot carrier injection are decreased. In addition, to create an effective heat passage from channel to outside of the device, a silicon region has embedded in the buried oxide. In order to reduce th...

We have fabricated tungsten-diamond-like-nanocomposite (W-DLN) Schottky contacts on n-type and p-type 6H SiC (Si-face). The as-deposited n-type and ptype contacts are rectifying and measurement results suggest that the electrical characteristics are dominated by the properties of the tungsten SiC interface. The n-type contacts have a reverse leakage current density of 4.1 x 10 -3 Acm -2 and the...

: Induction generators are gaining the popularity due to its simplicity and no synchronization problem. However the major drawback of this machine is its additional reactive burden on the system, where it is connected. In this paper an attempt is made to explore the performance of a grid connected induction generator (GCIG) due to weak grid conditions i.e. voltage and frequency fluctuations. It...

This paper proposes a voltage-based hot-spot detection method for photovoltaic (PV) string using the projector. Hot-spots form in solar cells at defects causing a high carrier recombination rate, it appears as a high reverse leakage current of p-n junctions when solar cells are partially shadowed. Using this characteristic, authors previously developed a voltage-based hot-spot detection method ...

Reverse leakage current characteristics of GaInN/GaN multiple quantum well light-emitting diodes (LEDs) with various chip geometries are examined. The effect of chip geometry on the reverse leakage current is negligible at a low voltage, but becomes apparent at a high voltage. The reverse breakdown voltage of LEDs decreases as the angle of vertex in the chip geometry decreases presumably becaus...

Flash ADC is an important component for realization of high speed and low power devices in signal processing system .As technology scale down, leakage current becomes the most concerned factor. This paper reports the power gating technique to provide the reduction mechanism for suppressing the leakage current effectively during standby mode but it introduces ground bounce noise. We designed a “...

Flashover of polluted insulators in contaminated areas is one of the most important factors influencing the operation of transmission and distribution lines and finally line outages. Therefore, it is essential to prevent and detect flashover in the insulators. Hence, utilizing the insulator status monitoring systems and predicting their functions have absorbed a lot of attention over the recent...

The inputs and clock signals combination sleep state dependent leakage current characteristics is analyzed and the optimal sleep state is examined in sub-65 nm dual Vt footed domino circuits. Simulations based on 65 and 45 nm BSIM4 models show that the conventional CHIL state (the clock signal is high and inputs are all low) is ineffective for lowering the leakage current and the conventional C...

We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors sFETsd. We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single-crystal FET performance. This degradation occurs even wh...

We report on a measurement procedure to separate ferroelectric switching current and dielectric displacement current from the leakage current in leaky ferroelectric thin-film capacitor structures. The ac current response is determined for two adjacent frequencies. Taking advantage of the different frequency dependencies of the ferroelectric switching current, dielectric displacement current and...