It is shown that the Anderson-Mott metal-insulator transition of paramagnetic, interacting disordered electrons in an external magnetic field is in the same universality class as the transition from a ferromagnetic metal to a ferromagnetic insulator discussed recently. As a consequence, large corrections to scaling exist in the magnetic-field universality class, which have been neglected in pre...

We report the first application of critical cluster techniques to the Mott metal-insulator transition in vanadium dioxide. We show that the geometric universal properties of the metallic and insulating puddles observed by scanning near-field infrared microscopy are consistent with the system passing near criticality of the random field Ising model as temperature is varied. The resulting large b...

We present the results of a magnetoresistance study of the disorder-induced superconductor-insulator transition in an amorphous indium-oxide thin film patterned by a nanoscale periodic array of holes. We observed Little-Parks-like oscillations over our entire range of disorder spanning the transition. The period of oscillations was unchanged and corresponded to the superconducting flux quantum ...

It is shown that the Anderson-Mott metal-insulator transition of paramagnetic, interacting disordered electrons in an external magnetic field is in the same universality class as the transition from a ferromagnetic metal to a ferromagnetic insulator discussed recently. As a consequence, large corrections to scaling exist in the magnetic-field universality class, which have been neglected in pre...

A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron correlation induced Mott metal-to-insulator transition. The Mott material is remotely (modulation) doped with a degenerately doped conventional band insulator. An applied voltage modulates the electron transfer from the doped band insulator to the Mott materia...