By the use of density functional calculations it is shown that the edges of a two-dimensional slab of insulating MoS2 exhibit several metallic states. These edge states can be viewed as one-dimensional conducting wires, and we show that they can be observed directly using scanning tunneling microscopy for single-layer MoS2 nanoparticles grown on a support.

This communication describes a new procedure to increase the sensitivity of C(4)D in PDMS/glass microchips. The method consists in doping the insulating layer (PDMS) over the electrodes with nanoparticles of TiO(2), increasing thus its dielectric constant. The experimental protocol is simple, inexpensive, and fast.

We report the remarkably improved crystal quality of semi-insulating GaN grown by metalorganic chemical vapor deposition on an AlN buffer layer, which is deposited on sapphire substrate. The electrical and structural properties are characterized by dark current–voltage transmission line model and X-ray diffraction measurements. It is found that the crystal quality of the GaN epilayer is strongl...

Electron beam lithography is a viable option for exposure of high-resolution patterns such as t-gates in GaAs manufacturing, in part due to the speed and ease of use of modern electron beam direct write tools. In order to achieve greater speed, these tools utilize higher beam current densities and variable shaped beams. The resulting higher beam currents at the resist surface, however, can crea...

This study describes the fabrication and performance of an endothelial cell compatible, optically thin, indium tin oxide (ITO) microimpedance biosensor. The biosensor was constructed by sputtering a thin insulating layer of silicon nitride (Si(3)N(4)) onto a 100 nm thick ITO layer. Indium tin oxide electrodes were formed by chemically etching 250 or 500 microm diameter holes through the Si(3)N(...

The quality of the interface between the insulating layer and the Si substrate in contemporary submicron MOS technology is a critical issue for device functioning. It is characterized through the electrically active defect centers, known as interface states. Their response to the frequency is discussed here, by analyzing capacitance-voltage and conductance-voltage curves. The C-V method is pref...

The characteristics of dislocation-related leakage current paths in an AlGaN/GaN heterostructure grown by molecular-beam epitaxy and their mitigation by local surface modification have been investigated using conductive atomic force microscopy. When a voltage is applied between the tip in an atomic force microscope ~AFM! and the sample, a thin insulating layer is formed in the vicinity of the l...

In low ambient temperatures the engine will have poor output torque and power generation at the first cycles of its performance, long start time and huge noxious emissions because of insufficient temperature and quality of air-fuel mixture and failure of flame to burn the charge. It is noted that any attempt to increase the charge temperature leads to better combustion conditions. By applying t...