X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InPxOy layer is easily formed at the HfO2/InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved ...

Ice nucleating particles active at warm temperatures (e.g. -8 °C; INP-8) can transform clouds from liquid to mixedphase, even at very small number concentrations (<10 m). Over the course of 15 months, we found very similar patterns in weekly concentrations of INP-8 in PM10 (median = 1.7 m, maximum = 10.1 m) and weekly amounts of rainfall (median = 28 mm, maximum = 153 mm) at Birkenes, southern ...

The need for higher performance electronics for space and defense applications has driven the development of InP heterojunction technologies. For the past 10 years, TRW has been developing InP HBT and HEMT technologies for mission critical applications [1– 3]. Consistent and continuous improvements in the basic MBE structure and process technology have enhanced device and circuit performance, p...

Indium Phosphide QuantumDots (InP QDs) have emerged as an alternative to toxic metal ion based QDs in nanobiotechnology. The ability to generate cationic surface charge, without compromising stability and biocompatibility, is essential in realizing the full potential of InP QDs in biological applications. We have addressed this challenge by developing a place exchange protocol for the preparati...

Indium Phosphide Quantum Dots (InP QDs) have emerged as an alternative to toxic metal ion based QDs in nanobiotechnology. The ability to generate cationic surface charge, without compromising stability and biocompatibility, is essential in realizing the full potential of InP QDs in biological applications. We have addressed this challenge by developing a place exchange protocol for the preparat...

Topographic and chemical mapping of materials at high resolution define the goals of a microscope. Force microscopy can provide methods for simultaneous topography and chemical characterization of materials. Here we describe the use of the atomic force microscope to map chemical variations of semiconductor samples. Chemical maps of semiconductor InP/InGaAs alloys have been determined with 3 nm ...

N. Dobigeon*, Y. Altmann, N. Brun and S. Moussaoui University of Toulouse, IRIT/INP-ENSEEIHT, 31071 Toulouse Cedex 7, France School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh, EH14 4AS, United Kingdom Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Univ. Paris-Saclay, 91405 Orsay Cedex, France Ecole Centrale de Nantes, IRCCyN, UMR CNRS 6597, N...

Two ee colliders, VEPP-4M and VEPP2000, are taking data at the Budker INP in Novosibirsk, Russia. KEDR detector at the VEPP-4M collider continues deliver precision measurements of the charmonium family. Results of the ψ(2S ) and ψ(3770) study are presented. Two energy scans of a center-of-mass energy range from 1 GeV to 2 GeV has been performed by the VEPP2000 collider with an integrated lumino...

The authors report the self-organized growth of InAs/ InAlAs quantum wires on nominal 001 InP substrate and 001 InP substrates misoriented by 2°, 4°, and 8° towards both −110 and 110 . The influence of substrate misorientation on the structural and optical properties of these InAs/ InAlAs quantum wires is studied by transmission electron microscopy and photoluminescence measurements. Compared w...

We report reproducible fabrication of InP-InAsP nanowire light-emitting diodes in which electron-hole recombination is restricted to a quantum-dot-sized InAsP section. The nanowire geometry naturally self-aligns the quantum dot with the n-InP and p-InP ends of the wire, making these devices promising candidates for electrically driven quantum optics experiments. We have investigated the operati...