Ni-catalyzed Si-based heterostructure nanowires grown on crystal Si substrates by hot-wire chemical vapor deposition (HWCVD) were studied. The nanowires which included NiSi nanowires, NiSi/Si core-shell nanowires, and NiSi/SiC core-shell nanowires were grown by varying the filament temperature T f from 1150 to 1850 °C. At a T f of 1450 °C, the heterostructure nanowires were formed by crystallin...

Only a single linearly dispersing π-band cone, characteristic of monolayer graphene, has so far been observed in Angle Resolved Photoemission (ARPES) experiments on multilayer graphene grown on C-face SiC. A rotational disorder that effectively decouples adjacent layers has been suggested to explain this. However, the coexistence of μm-sized grains of single and multilayer graphene with differe...

industrial towns with whatever purpose, can reduce the problems in rural areas, providing employment and income for rural people and the welfare of the inhabitants of the surrounding villages to be effective. evaluation of the impact of the creation of industrial zones and rural employment status of workers, especially rural workers, the main objective of this research. this study seeks to answ...

The crystallinity of epitaxial graphene (EG) grown on a Hexagonal-SiC substrate is found to be enhanced greatly by capping the substrate with a molybdenum plate (Mo-plate) during vacuum annealing. The crystallinity enhancement of EG layer grown with Mo-plate capping is confirmed by the significant change of measured Raman spectra, compared to the spectra for no capping. Mo-plate capping is cons...

To form a memory cell, it is essential to epitaxially grow high quality pnp stack 3C SiC on Si. It requires a SiC seed, p type, n-type and p type 3C-SiC to be realized. The distributions of the elements in the film will be largely decided by the processes performed for the different purposes. To verify the distribution of the elements with depth, SIMS can be a sensitive and informative techniqu...

We report on Si NWs modified by covalent scaffolds, via SiC bonds, that give nearly full coverage of the Si atop sites and, at the same time, provide a route for subsequent functionalization. The obtained CH(3)CHCHSi NWs exhibit superior oxidation resistance over Si NWs that are modified with CH(3) or CH(3)CC functionalities, which give nearly full coverage of the Si atop site too.

We show that a SiC photonic crystal cannot only inhibit two photon absorption completely, but also suppress higher-order multiple photon absorption significantly at telecommunication wavelengths, compared to conventional Si-based photonic crystal nanocavities. Resonant spectra of a SiC nanocavity maintain a Lorentzian profile even at input energies 100 times higher than what can be applied to a...

An in situ optical technique to visualize surface distortions of the first monochromator crystal under synchrotron beam heat loading has been developed and applied to measure surface profiles of multilayer optics under white wiggler beam at the CHESS A2 beamline. Two identical multilayer structures deposited on Si and SiC substrates have been tested. Comparison of the reconstructed 3D heatbump ...